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2N7002-13-F-VB Product details
Back to previous pageProduct introduction：
### Product Overview: 2N7002-13-F-VB
2N7002-13-F-VB is a single N-channel MOSFET that uses Trench technology and has low power consumption and high performance. It uses a SOT23-3 package and is suitable for low-power applications. This MOSFET has low on-resistance and moderate withstand voltage characteristics, and is suitable for power management and switch control applications that require low power and high reliability.
2N7002-13-F-VB is a single N-channel MOSFET that uses Trench technology and has low power consumption and high performance. It uses a SOT23-3 package and is suitable for low-power applications. This MOSFET has low on-resistance and moderate withstand voltage characteristics, and is suitable for power management and switch control applications that require low power and high reliability.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| SOT23-3 | Single-N-Channel | 60V | 1.7V | 0.3A | 3100mΩ | 2800mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| SOT23-3 | Single-N-Channel | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| SOT23-3 | Single-N-Channel | 60V | 1.7V | 0.3A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| SOT23-3 | Single-N-Channel | 60V | 1.7V | 0.3A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| SOT23-3 | Single-N-Channel |
### Detailed Specifications
- **Package**: SOT23-3
- **Configuration**: Single N-channel
- **Drain-Source Voltage (VDS)**: 60V
- **Gate-Source Voltage (VGS)**: ±20V
- **Threshold Voltage (Vth)**: 1.7V
- **On-Resistance (RDS(ON))**:
- 3100mΩ @ VGS = 4.5V
- 2800mΩ @ VGS = 10V
- **Drain Current (ID)**: 0.3A
- **Technology**: Trench
- **Package**: SOT23-3
- **Configuration**: Single N-channel
- **Drain-Source Voltage (VDS)**: 60V
- **Gate-Source Voltage (VGS)**: ±20V
- **Threshold Voltage (Vth)**: 1.7V
- **On-Resistance (RDS(ON))**:
- 3100mΩ @ VGS = 4.5V
- 2800mΩ @ VGS = 10V
- **Drain Current (ID)**: 0.3A
- **Technology**: Trench
Domain and module applications：
### Application and usage scenarios
1. **Low-power power management**:
- **Portable devices**: Due to its low power consumption, it is suitable for power management circuits in portable devices to extend battery life.
- **Embedded systems**: It can be used for power switches in embedded systems to provide efficient power management.
2. **Switch control**:
- **Circuit protection**: It is suitable for switch control in circuit protection and provides reliable circuit protection functions.
- **Signal processing**: It can be used for switch control in signal processing circuits and provides high-performance signal processing capabilities.
3. **Sensor interface**:
- **Sensor signal processing**: It is suitable for switch control in sensor interfaces and provides stable and reliable sensor signal processing capabilities.
2N7002-13-F-VB is suitable for a variety of low-power application scenarios, providing engineers and designers with a low-power, high-performance power management and switch control solution.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
