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2N7000RLRAG-VB Product details
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### VBsemi 2N7000RLRAG-VB MOSFET Product Overview
VBsemi 2N7000RLRAG-VB is a single N-channel MOSFET for low power applications. It is packaged in a TO92 package and is suitable for small circuit designs. This MOSFET uses trench structure technology, has low on-resistance and low threshold voltage, and is suitable for applications requiring low power and high efficiency.
VBsemi 2N7000RLRAG-VB is a single N-channel MOSFET for low power applications. It is packaged in a TO92 package and is suitable for small circuit designs. This MOSFET uses trench structure technology, has low on-resistance and low threshold voltage, and is suitable for applications requiring low power and high efficiency.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO92 | Single-N-Channel | 60V | 0.8V | 0.45A | 2400mΩ | 2000mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO92 | Single-N-Channel | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO92 | Single-N-Channel | 60V | 0.8V | 0.45A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO92 | Single-N-Channel | 60V | 0.8V | 0.45A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO92 | Single-N-Channel |
### Detailed Specifications
- **Package:** TO92
- **Configuration:** Single N-channel
- **VDS (Drain-Source Voltage):** 60V
- **VGS (Gate-Source Voltage):** ±20V
- **Vth (Gate Threshold Voltage):** 0.8V
- **RDS(ON) (On-Resistance):**
- 2400mΩ @ VGS = 4.5V
- 2000mΩ @ VGS = 10V
- **ID (Continuous Drain Current):** 0.45A
- **Technology:** Trench Structure
- **Package:** TO92
- **Configuration:** Single N-channel
- **VDS (Drain-Source Voltage):** 60V
- **VGS (Gate-Source Voltage):** ±20V
- **Vth (Gate Threshold Voltage):** 0.8V
- **RDS(ON) (On-Resistance):**
- 2400mΩ @ VGS = 4.5V
- 2000mΩ @ VGS = 10V
- **ID (Continuous Drain Current):** 0.45A
- **Technology:** Trench Structure
Domain and module applications：
### Applications and Use Cases
VBsemi 2N7000RLRAG-VB MOSFET is suitable for various fields and modules:
1. **Electronic Switches:**
- **Low Power Switches:** Used for low power switches in circuits, such as low power LED light control.
- **Signal Switches:** Used for controlling switches in signal circuits, such as audio equipment and communication equipment.
2. **Power Management:**
- **Low Power Regulators:** Used for power switches in low power regulators to provide stable output voltage.
3. **Sensor Interfaces:**
- **Sensor Signal Amplifiers:** Used for switches in sensor interface circuits to amplify sensor signals and transmit them to microcontrollers.
4. **Analog Switches:**
- **Analog Signal Switches:** Used for analog signal switches, such as signal switches in audio equipment.
5. **Power Tools:**
- **Small Power Tools:** Used to control the switch of low-power power tools, such as the control of small electric motors.
VBsemi 2N7000RLRAG-VB MOSFET has the characteristics of low power and high efficiency, suitable for a variety of low-power applications, including electronic switching, power management, sensor interface, etc.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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