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2N7000BU-VB Product details
Back to previous pageProduct introduction：
### Product Introduction
**2N7000BU-VB** is a single N-channel MOSFET produced by VBsemi and uses a TO92 package. This MOSFET has a drain-source voltage (VDS) of 60V and a gate-source voltage (VGS) of 20V (±). Its turn-on threshold voltage (Vth) is 0.8V, the on-resistance (RDS(ON)) is 2400mΩ at a gate-source voltage of 4.5V, and 2000mΩ at a gate-source voltage of 10V, and the maximum drain current (ID) is 0.45A. It uses Trench technology and is suitable for low-power application scenarios.
**2N7000BU-VB** is a single N-channel MOSFET produced by VBsemi and uses a TO92 package. This MOSFET has a drain-source voltage (VDS) of 60V and a gate-source voltage (VGS) of 20V (±). Its turn-on threshold voltage (Vth) is 0.8V, the on-resistance (RDS(ON)) is 2400mΩ at a gate-source voltage of 4.5V, and 2000mΩ at a gate-source voltage of 10V, and the maximum drain current (ID) is 0.45A. It uses Trench technology and is suitable for low-power application scenarios.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO92 | Single-N-Channel | 60V | 0.8V | 0.45A | 2400mΩ | 2000mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO92 | Single-N-Channel | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO92 | Single-N-Channel | 60V | 0.8V | 0.45A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO92 | Single-N-Channel | 60V | 0.8V | 0.45A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO92 | Single-N-Channel |
### Detailed parameter description
| Parameters| Specifications|
|--------------------|------------------------|
| Package type| TO92 |
| Configuration| Single N-channel|
| Drain-source voltage (VDS) | 60V |
| Gate-source voltage (VGS) | 20V (±) |
| Turn-on threshold voltage (Vth) | 0.8V |
| On-resistance (RDS(ON)) | 2400mΩ@VGS=4.5V, 2000mΩ@10V |
| Maximum drain current (ID) | 0.45A |
| Technology| Trench |
Domain and module applications：
### Applications and Modules
1. **Low Power Switch**: 2N7000BU-VB MOSFET is suitable for various low power switch applications, such as signal switch, analog switch and logic switch. Its low on-resistance and low turn-on threshold voltage enable it to provide reliable switching function.
2. **Power Management**: In various low power power management circuits, this MOSFET can be used as a switching element, such as DC-DC converter and regulator. Its high reliability and stability make it an ideal choice in the field of power management.
3. **Sensor Interface**: In various sensor interface circuits, 2N7000BU-VB MOSFET can be used to control the power supply and signal transmission of sensors. Its low power characteristics and reliability enable it to meet the power consumption and stability requirements of sensor interface circuits.
1. **Low Power Switch**: 2N7000BU-VB MOSFET is suitable for various low power switch applications, such as signal switch, analog switch and logic switch. Its low on-resistance and low turn-on threshold voltage enable it to provide reliable switching function.
2. **Power Management**: In various low power power management circuits, this MOSFET can be used as a switching element, such as DC-DC converter and regulator. Its high reliability and stability make it an ideal choice in the field of power management.
3. **Sensor Interface**: In various sensor interface circuits, 2N7000BU-VB MOSFET can be used to control the power supply and signal transmission of sensors. Its low power characteristics and reliability enable it to meet the power consumption and stability requirements of sensor interface circuits.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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