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2N65ZL-TF3-T-VB Product details
Back to previous pageProduct introduction：
### Product Introduction
VBsemi's 2N65ZL-TF3-T-VB is a high-performance single N-channel MOSFET manufactured using planar technology with high drain-source voltage and moderate on-resistance. The device is suitable for applications requiring high voltage and low current, such as switching power supplies, lighting systems and consumer electronics. The 2N65ZL-TF3-T-VB adopts TO220F package, which has good heat dissipation performance and high reliability, and is suitable for applications requiring medium power density and high voltage.
VBsemi's 2N65ZL-TF3-T-VB is a high-performance single N-channel MOSFET manufactured using planar technology with high drain-source voltage and moderate on-resistance. The device is suitable for applications requiring high voltage and low current, such as switching power supplies, lighting systems and consumer electronics. The 2N65ZL-TF3-T-VB adopts TO220F package, which has good heat dissipation performance and high reliability, and is suitable for applications requiring medium power density and high voltage.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N-Channel | 650V | 3.5V | 2A | 1700mΩ | Plannar |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N-Channel | Plannar |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N-Channel | 650V | 3.5V | 2A | Plannar |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N-Channel | 650V | 3.5V | 2A | Plannar |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N-Channel |
### Detailed parameter description
- **Model**: 2N65ZL-TF3-T-VB
- **Package**: TO220F
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 650V
- **Gate-source voltage (VGS)**: ±30V
- **Threshold voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**:
- 1700mΩ @ VGS = 10V
- **Drain current (ID)**: 2A
- **Technology**: Planar technology
- **Model**: 2N65ZL-TF3-T-VB
- **Package**: TO220F
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 650V
- **Gate-source voltage (VGS)**: ±30V
- **Threshold voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**:
- 1700mΩ @ VGS = 10V
- **Drain current (ID)**: 2A
- **Technology**: Planar technology
Domain and module applications：
### Applications and Module Examples
1. **Switching Power Supply**:
- In switching power supplies, 2N65ZL-TF3-T-VB can be used as a switching device of switching power supplies, such as power switches and inverters. Its high drain-source voltage and moderate on-resistance ensure the stability and efficiency of the switching power supply.
2. **Lighting System**:
- In LED lighting systems, this MOSFET can be used as a switching device of LED drivers. Its high drain-source voltage and moderate on-resistance ensure the stability and high efficiency of LED lighting systems.
3. **Consumer Electronics**:
- In consumer electronics, such as TVs, computer monitors, and audio systems, 2N65ZL-TF3-T-VB can be used for power management and switching circuits. Its high reliability and stability ensure the safe operation of the equipment.
4. **Industrial Control**:
- This MOSFET is suitable for power inverters and motor controllers in industrial control systems. Its high drain-source voltage and moderate on-resistance can improve the efficiency and stability of the system.
In summary, VBsemi's 2N65ZL-TF3-T-VB MOSFET is suitable for a variety of applications that require high voltage and low current, especially in switching power supplies, lighting systems, and consumer electronics.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
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