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2N65-VB TO220F Product details
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### VBsemi 2N65-VB MOSFET Product Overview
The VBsemi 2N65-VB is a high performance single N-channel MOSFET designed for various power management applications. This MOSFET is packaged in a TO220F package for medium power applications. It uses planar structure technology, has a high on-resistance and moderate current carrying capacity, and is suitable for applications requiring medium power and reliability.
The VBsemi 2N65-VB is a high performance single N-channel MOSFET designed for various power management applications. This MOSFET is packaged in a TO220F package for medium power applications. It uses planar structure technology, has a high on-resistance and moderate current carrying capacity, and is suitable for applications requiring medium power and reliability.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N-Channel | 650V | 3.5V | 2A | 1700mΩ | Plannar |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N-Channel | Plannar |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N-Channel | 650V | 3.5V | 2A | Plannar |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N-Channel | 650V | 3.5V | 2A | Plannar |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N-Channel |
### Detailed Specifications
- **Package:** TO220F
- **Configuration:** Single N-channel
- **VDS (Drain-Source Voltage):** 650V
- **VGS (Gate-Source Voltage):** ±30V
- **Vth (Gate Threshold Voltage):** 3.5V
- **RDS(ON) (On-Resistance):** 1700mΩ @ VGS = 10V
- **ID (Continuous Drain Current):** 2A
- **Technology:** Planar Structure
- **Package:** TO220F
- **Configuration:** Single N-channel
- **VDS (Drain-Source Voltage):** 650V
- **VGS (Gate-Source Voltage):** ±30V
- **Vth (Gate Threshold Voltage):** 3.5V
- **RDS(ON) (On-Resistance):** 1700mΩ @ VGS = 10V
- **ID (Continuous Drain Current):** 2A
- **Technology:** Planar Structure
Domain and module applications：
### Applications and Use Cases
VBsemi 2N65-VB MOSFET is suitable for various fields and modules:
1. **Power Modules:**
- **Switching Power Supply:** Used for power switches in medium power switching power supplies, providing stable output voltage and high efficiency.
- **Battery Management System:** Used for power switches in battery management systems, ensuring battery safety and high efficiency.
2. **Lighting Applications:**
- **LED Driver:** Used for power switches in LED lamp drivers, improving energy utilization and lamp life.
3. **Home Appliance Control:**
- **Air Conditioning Control:** Used for power switches in air conditioning systems, providing high efficiency and reliability control.
4. **Industrial Control Systems:**
- **PLC Controllers:** Used for power switching and control in industrial automation systems, ensuring high efficiency and stability.
5. **Power Tools:**
- **Power Drills and Power Saws:** Used to control the power switch of power tools, providing high efficiency and high power output.
VBsemi 2N65-VB MOSFET has moderate power and reliability, suitable for a variety of medium power applications, including power modules, home appliance controls, industrial control systems, etc.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
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