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2N65L-TM3-T-VB Product details
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### Product Introduction
**2N65L-TM3-T-VB** is a single N-channel MOSFET produced by VBsemi and packaged in TO251. This MOSFET has a drain-source voltage (VDS) of 650V and a gate-source voltage (VGS) of 30V (±). Its turn-on threshold voltage (Vth) is 3.5V, the on-resistance (RDS(ON)) is 4300mΩ at a gate-source voltage of 10V, and the maximum drain current (ID) is 2A. It uses Plannar technology and is suitable for low-power applications.
**2N65L-TM3-T-VB** is a single N-channel MOSFET produced by VBsemi and packaged in TO251. This MOSFET has a drain-source voltage (VDS) of 650V and a gate-source voltage (VGS) of 30V (±). Its turn-on threshold voltage (Vth) is 3.5V, the on-resistance (RDS(ON)) is 4300mΩ at a gate-source voltage of 10V, and the maximum drain current (ID) is 2A. It uses Plannar technology and is suitable for low-power applications.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO251 | Single-N-Channel | 650V | 3.5V | 2A | 4300mΩ | Plannar |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO251 | Single-N-Channel | Plannar |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO251 | Single-N-Channel | 650V | 3.5V | 2A | Plannar |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO251 | Single-N-Channel | 650V | 3.5V | 2A | Plannar |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO251 | Single-N-Channel |
### Detailed parameter description
| Parameters| Specifications|
|--------------------|------------------------|
| Package type| TO251 |
| Configuration| Single N-channel|
| Drain-source voltage (VDS) | 650V |
| Gate-source voltage (VGS) | 30V (±) |
| Turn-on threshold voltage (Vth) | 3.5V |
| On-resistance (RDS(ON)) | 4300mΩ@VGS=10V |
| Maximum drain current (ID) | 2A |
| Technology| Plannar |
Domain and module applications：
### Applications and Modules
1. **Power Management**: 2N65L-TM3-T-VB MOSFET is suitable for low-power power management, such as low-power inverters, power adapters, etc. Its low on-resistance and moderate drain-source voltage enable it to provide efficient power conversion.
2. **LED Lighting Driver**: In LED lighting driver circuits, this MOSFET can be used to control the brightness and switching of LED light strips, LED bulbs, etc. Its high drain-source voltage and low on-resistance characteristics enable it to provide a stable drive current.
3. **Electric Vehicle Charging Pile**: In electric vehicle charging piles, 2N65L-TM3-T-VB MOSFET is used for power conversion and control of DC charging piles. Its high voltage and low power characteristics ensure high efficiency and stability of the charging process.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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