Product parameter：
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds2.5 |
Rds4.5 |
Rds10 |
Technology |
| TO247 |
Single-N |
650V |
30（±V） |
3.5V |
20A |
|
|
160(mΩ) |
SJ_Multi-EPI |
Detailed parameter description:
1. Single N: Single N channel
2. VDS(V): 650 - Saturated Drain-Source Voltage
3. VGS(㊣V): 30 - Gate-source voltage (maximum)
4. Vth(V): 3.5 - Gate threshold voltage
5. VGS=10V(m次): 160 - Drain-source resistance at VGS=10V
6. ID (A): 20 - Continuous Drain Current
7. Technology: SJ_Multi-EPI - Multiple epitaxial structure technology
Domain and module applications：
Applicable areas and modules:
1. Power module: Due to its high saturated drain-source voltage and drain current capability, it is suitable for high-power power modules, such as high-performance switching power supplies and power amplifiers.
2. Electric vehicles: In the power inverter of electric vehicles, the power switching module can be used to control the motor due to its moderate voltage and current capabilities.
3. High-frequency switching circuit: Due to its high drain-source resistance and stable performance, it is suitable for high-frequency switching circuits, such as RF power amplifiers and RF switches.
4. Industrial automation: In the field of industrial automation, it can be used in equipment such as controllers, servo drives, and industrial power supplies to achieve efficient energy conversion and precise control.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
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