中文
English
2N65H-VB TO252 Product details
Back to previous pageProduct introduction：
### Product Introduction
**2N65H-VB** is a single N-channel MOSFET produced by VBsemi and packaged in TO252. This MOSFET has a drain-source voltage (VDS) of 650V and a gate-source voltage (VGS) of 30V (±). Its turn-on threshold voltage (Vth) is 3.5V, the on-resistance (RDS(ON)) is 3440mΩ at a gate-source voltage of 4.5V, 4300mΩ at a gate-source voltage of 10V, and the maximum drain current (ID) is 2A. It uses Plannar technology and is suitable for low-power applications.
**2N65H-VB** is a single N-channel MOSFET produced by VBsemi and packaged in TO252. This MOSFET has a drain-source voltage (VDS) of 650V and a gate-source voltage (VGS) of 30V (±). Its turn-on threshold voltage (Vth) is 3.5V, the on-resistance (RDS(ON)) is 3440mΩ at a gate-source voltage of 4.5V, 4300mΩ at a gate-source voltage of 10V, and the maximum drain current (ID) is 2A. It uses Plannar technology and is suitable for low-power applications.
File download
Download PDF document
Download now
Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N-Channel | 650V | 3.5V | 2A | 3440mΩ | 4300mΩ | Plannar |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N-Channel | Plannar |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N-Channel | 650V | 3.5V | 2A | Plannar |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N-Channel | 650V | 3.5V | 2A | Plannar |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N-Channel |
### Detailed parameter description
| Parameters| Specifications|
|--------------------|------------------------|
| Package type| TO252 |
| Configuration| Single N-channel|
| Drain-source voltage (VDS) | 650V |
| Gate-source voltage (VGS) | 30V (±) |
| Turn-on threshold voltage (Vth) | 3.5V |
| On-resistance (RDS(ON)) | 3440mΩ@VGS=4.5V, 4300mΩ@10V |
| Maximum drain current (ID) | 2A |
| Technology | Plannar |
Domain and module applications：
### Applications and Modules
1. **Low Power Inverter**: 2N65H-VB MOSFET is suitable for low power inverters, such as home appliance inverters, power inverters, etc. Its low on-resistance and moderate drain-source voltage enable it to provide efficient power conversion.
2. **LED Lighting Driver**: In LED lighting driver circuits, this MOSFET can be used to control the brightness and switching of LED light strips, LED bulbs, etc. Its high drain-source voltage and low on-resistance characteristics enable it to provide stable drive current.
3. **Power Management**: In various power management circuits, 2N65H-VB MOSFET can be used as a switching element, such as DC-DC converters, regulators, etc. Its high reliability and stability make it an ideal choice in the field of power management.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
