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2N65H-VB TO251 Product details
Back to previous pageProduct introduction：
### Product Introduction
2N65H-VB is a single N-channel MOSFET in TO251 package provided by VBsemi. The device has high drain voltage and moderate on-resistance, suitable for a variety of low and medium power applications. Plannar technology is used to provide reliable performance and stability.
2N65H-VB is a single N-channel MOSFET in TO251 package provided by VBsemi. The device has high drain voltage and moderate on-resistance, suitable for a variety of low and medium power applications. Plannar technology is used to provide reliable performance and stability.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO251 | Single-N-Channel | 650V | 3.5V | 2A | 4300mΩ | Plannar |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO251 | Single-N-Channel | Plannar |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO251 | Single-N-Channel | 650V | 3.5V | 2A | Plannar |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO251 | Single-N-Channel | 650V | 3.5V | 2A | Plannar |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO251 | Single-N-Channel |
### Detailed parameter description
- **Package type**: TO251
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 650V
- **Gate-source voltage (VGS)**: ±30V
- **Gate threshold voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**: 4300mΩ @ VGS=10V
- **Drain current (ID)**: 2A
- **Technology**: Plannar
- **Package type**: TO251
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 650V
- **Gate-source voltage (VGS)**: ±30V
- **Gate threshold voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**: 4300mΩ @ VGS=10V
- **Drain current (ID)**: 2A
- **Technology**: Plannar
Domain and module applications：
### Application Fields and Modules
2N65H-VB MOSFET has a wide range of applications in multiple fields and modules. Here are some typical application examples:
1. **Power Management**:
Due to its high drain voltage and moderate on-resistance, this device is suitable for the main switching device in low and medium power switching power supplies, helping to improve power efficiency and reduce system costs.
2. **Power Tools**:
In power tools, 2N65H-VB can be used as a switching device in the motor driver, providing efficient power conversion and stable power tool performance.
3. **Home Appliance Control**:
This MOSFET can be used in the switching circuits in home appliance control systems, such as air conditioners, refrigerators, etc., to achieve efficient energy conversion and circuit control.
4. **Electric Vehicle Charging Station**:
In electric vehicle charging stations, the 2N65H-VB can be used as a switching device to help achieve a fast and safe charging process.
5. **Industrial Automation**:
The device is suitable for control circuits and drivers in industrial automation systems, providing reliable circuit control and stable operation.
The above application examples show the versatility and applicability of the 2N65H-VB, making it an ideal choice for a variety of low- and medium-power electronic systems.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
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