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2N60L-TF1-T-VB Product details
Back to previous pageProduct introduction：
### Product Introduction
**2N60L-TF1-T-VB** is a single N-channel MOSFET produced by VBsemi and packaged in TO220F. This MOSFET has a drain-source voltage (VDS) of 650V and a gate-source voltage (VGS) of 30V (±). Its turn-on threshold voltage (Vth) is 3.5V, the on-resistance (RDS(ON)) is 1700mΩ at a gate-source voltage of 10V, and the maximum drain current (ID) is 2A. It uses Plannar technology and is suitable for low-power applications.
**2N60L-TF1-T-VB** is a single N-channel MOSFET produced by VBsemi and packaged in TO220F. This MOSFET has a drain-source voltage (VDS) of 650V and a gate-source voltage (VGS) of 30V (±). Its turn-on threshold voltage (Vth) is 3.5V, the on-resistance (RDS(ON)) is 1700mΩ at a gate-source voltage of 10V, and the maximum drain current (ID) is 2A. It uses Plannar technology and is suitable for low-power applications.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N-Channel | 650V | 3.5V | 2A | 1700mΩ | Plannar |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N-Channel | Plannar |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N-Channel | 650V | 3.5V | 2A | Plannar |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N-Channel | 650V | 3.5V | 2A | Plannar |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N-Channel |
### Detailed parameter description
| Parameters| Specifications|
|--------------------|------------------------|
| Package type| TO220F |
| Configuration| Single N-channel|
| Drain-source voltage (VDS) | 650V |
| Gate-source voltage (VGS) | 30V (±) |
| Turn-on threshold voltage (Vth) | 3.5V |
| On-resistance (RDS(ON)) | 1700mΩ@VGS=10V |
| Maximum drain current (ID) | 2A |
| Technology | Plannar |
Domain and module applications：
### Applications and Modules
1. **Low Power Supply**: 2N60L-TF1-T-VB MOSFET is suitable for low power power modules such as adapters, small power supplies and chargers. Its low on-resistance and low power characteristics enable it to provide stable and reliable power output.
2. **Lighting Control**: In LED lighting and other low power lighting systems, this MOSFET is used to regulate current and control brightness to ensure efficient and stable operation of the system.
3. **Automotive Electronics**: In automotive electronic systems, 2N60L-TF1-T-VB MOSFET can be used in low power applications such as interior lighting, auxiliary circuits and sensor control. Its high voltage and low power characteristics enable it to meet the power density and efficiency requirements of automotive electronic systems.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
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