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2N60K-VB Product details
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### VBsemi 2N60K-VB MOSFET Product Overview
VBsemi 2N60K-VB is a high-performance N-Channel MOSFET in TO247 package, suitable for a variety of applications requiring high-efficiency power switching and power management. The device has robust performance and reliability, suitable for a variety of electronic devices and systems.
VBsemi 2N60K-VB is a high-performance N-Channel MOSFET in TO247 package, suitable for a variety of applications requiring high-efficiency power switching and power management. The device has robust performance and reliability, suitable for a variety of electronic devices and systems.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO247 | Single-N-Channel | 650V | 3.5V | 20A | 160mΩ | SJ_Multi-EPI |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N-Channel | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N-Channel | 650V | 3.5V | 20A | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N-Channel | 650V | 3.5V | 20A | SJ_Multi-EPI |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO247 | Single-N-Channel |
### Detailed Specifications
- **Package**: TO247
- **Configuration**: Single N-Channel
- **VDS (drain-source voltage)**: 650V
- **VGS (gate-source voltage)**: ±30V
- **Vth (threshold voltage)**: 3.5V
- **RDS(ON) (drain-source resistance)**: 160mΩ @ VGS = 10V
- **ID (continuous drain current)**: 20A
- **Technology**: SJ_Multi-EPI
- **Package**: TO247
- **Configuration**: Single N-Channel
- **VDS (drain-source voltage)**: 650V
- **VGS (gate-source voltage)**: ±30V
- **Vth (threshold voltage)**: 3.5V
- **RDS(ON) (drain-source resistance)**: 160mΩ @ VGS = 10V
- **ID (continuous drain current)**: 20A
- **Technology**: SJ_Multi-EPI
Domain and module applications：
### Application Examples
1. **Power Converter**:
2N60K-VB can be used for power switching and power management in power converters. Its high drain-source voltage and stable performance make it a key component in various power converter applications.
2. **Electric Vehicle Charging Pile**:
This MOSFET can be used for power switching and control in electric vehicle charging piles. Its high current handling capability and low on-resistance help improve the efficiency and stability of the charging pile.
3. **Industrial Control System**:
In industrial control systems, 2N60K-VB can be used for power switching and control. Its stable performance and high current handling capability make it a key component in industrial automation systems.
4. **UPS (Uninterruptible Power Supply)**:
Due to its high drain-source voltage and stable performance, this device can be used for power switching and control in UPS, helping to improve the efficiency and stability of UPS.
In general, VBsemi 2N60K-VB MOSFET can play an important role in power converters, electric vehicle charging piles, industrial control systems and UPS, providing high-efficiency power switching and power management solutions for various applications.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
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