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2N50L-TF3-T-VB Product details
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### Product Introduction Details
**VBsemi 2N50L-TF3-T-VB TO220F** is a high performance single N-channel MOSFET manufactured using planar technology. The device features high drain voltage and low on-resistance, making it suitable for power management and switching applications requiring high reliability and stability.
**VBsemi 2N50L-TF3-T-VB TO220F** is a high performance single N-channel MOSFET manufactured using planar technology. The device features high drain voltage and low on-resistance, making it suitable for power management and switching applications requiring high reliability and stability.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N-Channel | 650V | 3.5V | 2A | 1700mΩ | Plannar |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N-Channel | Plannar |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N-Channel | 650V | 3.5V | 2A | Plannar |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N-Channel | 650V | 3.5V | 2A | Plannar |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N-Channel |
### Detailed parameter description
- **Model**: 2N50L-TF3-T-VB
- **Package**: TO220F
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 650V
- **Gate-source voltage (VGS)**: ±30V
- **Threshold voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**: 1700mΩ @ VGS=10V
- **Drain current (ID)**: 2A
- **Technology**: Plannar
- **Model**: 2N50L-TF3-T-VB
- **Package**: TO220F
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 650V
- **Gate-source voltage (VGS)**: ±30V
- **Threshold voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**: 1700mΩ @ VGS=10V
- **Drain current (ID)**: 2A
- **Technology**: Plannar
Domain and module applications：
### Applicable fields and modules
**1. Power inverters**
2N50L-TF3-T-VB TO220F MOSFET is suitable for high-voltage switches and inverter modules in power inverters. Its high drain voltage and low on-resistance help improve the efficiency and reliability of the inverter.
**2. Automotive electronics**
In automotive electronic systems, this MOSFET can be used for power management and motor drive in on-board chargers, electric vehicles and hybrid vehicles. Its high reliability and stability are suitable for the requirements of the automotive environment.
**3. Industrial control**
In industrial control systems, 2N50L-TF3-T-VB TO220F can be used for high-voltage load switches and inverter modules. Its high drain voltage and low on-resistance help improve the efficiency and reliability of the system.
**4. Power Management**
This MOSFET is suitable for various power management modules, including DC-DC converters, AC-DC adapters, and UPS systems. Its high drain voltage and low on-resistance can improve the efficiency and performance of the module.
**5. Solar Inverter**
In solar photovoltaic inverters, 2N50L-TF3-T-VB TO220F can efficiently manage and convert the energy generated by solar panels, ensuring the efficient operation and stability of the inverter system.
In summary, VBsemi 2N50L-TF3-T-VB TO220F MOSFET has a wide range of application prospects in multiple fields and modules, and is an ideal choice for high-performance power management and high-voltage switching applications.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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