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2N0807-VB TO263 Product details
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### VBsemi 2N0807-VB MOSFET Product Overview
The VBsemi 2N0807-VB is a high performance single N-channel MOSFET designed for a variety of power management applications. This MOSFET is packaged in a TO263 package for high power applications. It uses trench technology, has very low on-resistance and high current carrying capability, and is suitable for applications requiring high power and high efficiency.
The VBsemi 2N0807-VB is a high performance single N-channel MOSFET designed for a variety of power management applications. This MOSFET is packaged in a TO263 package for high power applications. It uses trench technology, has very low on-resistance and high current carrying capability, and is suitable for applications requiring high power and high efficiency.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N-Channel | 80V | 3V | 120A | 10mΩ | 6mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N-Channel | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N-Channel | 80V | 3V | 120A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N-Channel | 80V | 3V | 120A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N-Channel |
### Detailed Specifications
- **Package:** TO263
- **Configuration:** Single N-Channel
- **VDS (Drain-Source Voltage):** 80V
- **VGS (Gate-Source Voltage):** ±20V
- **Vth (Gate Threshold Voltage):** 3V
- **RDS(ON) (On-Resistance):**
- 10mΩ @ VGS = 4.5V
- 6mΩ @ VGS = 10V
- **ID (Continuous Drain Current):** 120A
- **Technology:** Trench
- **Package:** TO263
- **Configuration:** Single N-Channel
- **VDS (Drain-Source Voltage):** 80V
- **VGS (Gate-Source Voltage):** ±20V
- **Vth (Gate Threshold Voltage):** 3V
- **RDS(ON) (On-Resistance):**
- 10mΩ @ VGS = 4.5V
- 6mΩ @ VGS = 10V
- **ID (Continuous Drain Current):** 120A
- **Technology:** Trench
Domain and module applications：
### Applications and Use Cases
VBsemi 2N0807-VB MOSFET is suitable for various fields and modules:
1. **Power Modules:**
- **DC-DC Converter:** Power switch for high-power DC-DC converter, providing stable output voltage and high efficiency.
- **DC-AC Inverter:** Used to control power switch in DC-AC inverter to improve energy conversion efficiency.
2. **Electric Vehicle Charging Pile:**
- **Charging Pile Controller:** Used to control the power switch of charging pile, providing high efficiency and safety charging service.
3. **Industrial Power System:**
- **High Voltage DC Power Supply:** Switching circuit for industrial-grade high voltage DC power supply to ensure stable power output.
- **Power Factor Correction:** In power factor correction device, used to control current and voltage to improve power utilization.
4. **Solar Inverter:**
- **Inverter Control:** Used to control current and voltage in solar inverters to improve energy conversion efficiency.
5. **Industrial Automation:**
- **PLC Controller:** Used for power switching and control in factory automation systems to ensure high efficiency and stability.
VBsemi 2N0807-VB MOSFET has extremely low on-resistance and high current carrying capacity, suitable for a variety of high power and high efficiency applications, including power modules, electric vehicle charging piles, solar inverters, etc.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
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