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2N06LH5-VB TO263 Product details
Back to previous pageProduct introduction：
### Product Introduction
**2N06LH5-VB** is a single N-channel MOSFET produced by VBsemi and packaged in TO263. This MOSFET has a drain-source voltage (VDS) of 60V and a gate-source voltage (VGS) of 20V (±). Its turn-on threshold voltage (Vth) is 3V, the on-resistance (RDS(ON)) is 4mΩ at a gate-source voltage of 10V, and the maximum drain current (ID) is 150A. It uses Trench technology and is suitable for various high-power applications.
**2N06LH5-VB** is a single N-channel MOSFET produced by VBsemi and packaged in TO263. This MOSFET has a drain-source voltage (VDS) of 60V and a gate-source voltage (VGS) of 20V (±). Its turn-on threshold voltage (Vth) is 3V, the on-resistance (RDS(ON)) is 4mΩ at a gate-source voltage of 10V, and the maximum drain current (ID) is 150A. It uses Trench technology and is suitable for various high-power applications.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N-Channel | 60V | 3V | 150A | 4mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N-Channel | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N-Channel | 60V | 3V | 150A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N-Channel | 60V | 3V | 150A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N-Channel |
### Detailed parameter description
| Parameters| Specifications|
|--------------------|---------------------|
| Package type| TO263 |
| Configuration| Single N-channel|
| Drain-source voltage (VDS) | 60V |
| Gate-source voltage (VGS) | 20V (±) |
| Turn-on threshold voltage (Vth) | 3V |
| On-resistance (RDS(ON)) | 4mΩ@VGS=10V |
| Maximum drain current (ID) | 150A |
| Technology | Trench |
| Parameters| Specifications|
|--------------------|---------------------|
| Package type| TO263 |
| Configuration| Single N-channel|
| Drain-source voltage (VDS) | 60V |
| Gate-source voltage (VGS) | 20V (±) |
| Turn-on threshold voltage (Vth) | 3V |
| On-resistance (RDS(ON)) | 4mΩ@VGS=10V |
| Maximum drain current (ID) | 150A |
| Technology | Trench |
Domain and module applications：
### Applications and Modules
1. **Motor Drive**: 2N06LH5-VB MOSFET is suitable for high-power motor drives such as electric vehicles, power tools, and industrial motors. Its high drain current and low on-resistance capabilities enable it to provide efficient motor control and drive.
2. **Power Module**: In power modules that require high power density and high efficiency, 2N06LH5-VB MOSFET can be used as a switching element. Its high current and low on-resistance characteristics enable it to provide stable and reliable power output.
3. **Server Power**: In power management for servers and data centers, 2N06LH5-VB MOSFET can be used in DC-DC converters and server power supply units (PSUs). Its high efficiency and high reliability make it an ideal choice for server power supplies.
4. **Electric Vehicle Charging Pile**: In electric vehicle charging piles, 2N06LH5-VB MOSFET is used for power conversion and control of DC charging piles. Its high voltage and high current capabilities ensure high efficiency and stability of the charging process.
1. **Motor Drive**: 2N06LH5-VB MOSFET is suitable for high-power motor drives such as electric vehicles, power tools, and industrial motors. Its high drain current and low on-resistance capabilities enable it to provide efficient motor control and drive.
2. **Power Module**: In power modules that require high power density and high efficiency, 2N06LH5-VB MOSFET can be used as a switching element. Its high current and low on-resistance characteristics enable it to provide stable and reliable power output.
3. **Server Power**: In power management for servers and data centers, 2N06LH5-VB MOSFET can be used in DC-DC converters and server power supply units (PSUs). Its high efficiency and high reliability make it an ideal choice for server power supplies.
4. **Electric Vehicle Charging Pile**: In electric vehicle charging piles, 2N06LH5-VB MOSFET is used for power conversion and control of DC charging piles. Its high voltage and high current capabilities ensure high efficiency and stability of the charging process.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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