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2N06L11-VB TO262F Product details
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### Product Introduction Details
**VBsemi 2N06L11-VB TO262** is a high performance single N-channel MOSFET manufactured using advanced trench technology. With high current handling capability and low on-resistance, the device is suitable for power management and switching applications requiring high efficiency and high power density.
**VBsemi 2N06L11-VB TO262** is a high performance single N-channel MOSFET manufactured using advanced trench technology. With high current handling capability and low on-resistance, the device is suitable for power management and switching applications requiring high efficiency and high power density.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO262 | Single-N-Channel | 60V | 3.5V | 210A | 3mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO262 | Single-N-Channel | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO262 | Single-N-Channel | 60V | 3.5V | 210A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO262 | Single-N-Channel | 60V | 3.5V | 210A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO262 | Single-N-Channel |
### Detailed parameter description
- **Model**: 2N06L11-VB
- **Package**: TO262
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 60V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**: 3mΩ @ VGS=10V
- **Drain current (ID)**: 210A
- **Technology**: Trench
- **Model**: 2N06L11-VB
- **Package**: TO262
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 60V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**: 3mΩ @ VGS=10V
- **Drain current (ID)**: 210A
- **Technology**: Trench
Domain and module applications：
### Applicable fields and modules
**1. Electric vehicles (EV)**
2N06L11-VB TO262 MOSFET is suitable for motor control and drive modules in electric vehicles. Its high current handling capability and low on-resistance can achieve high-efficiency power conversion, improving the performance and range of electric vehicles.
**2. Solar inverters**
In solar photovoltaic inverters, this MOSFET can efficiently manage and convert the energy generated by solar panels, ensuring the efficient operation and stability of the inverter system.
**3. Industrial power supplies**
2N06L11-VB TO262 is suitable for high-power switches and inverter modules in industrial power supplies. Its high current capability and low on-resistance make it excel in industrial automation equipment and large machinery.
**4. Servers and Data Centers**
In the power management systems of servers and data centers, this MOSFET can be used for efficient power distribution and load switching to ensure stable operation and energy efficiency optimization of the equipment.
**5. Power Modules**
Due to its high current handling capability and low on-resistance, 2N06L11-VB TO262 is suitable for various power modules, including DC-DC converters, AC-DC adapters and UPS systems, which can improve the efficiency and performance of the modules.
In summary, VBsemi 2N06L11-VB TO262 MOSFET has broad application prospects in multiple fields and modules, and is an ideal choice for high-performance power management and high-power control applications.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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