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2N0612-VB TO263 Product details
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### VBsemi 2N0612-VB MOSFET Product Overview
The VBsemi 2N0612-VB is a high-performance N-Channel MOSFET in a TO263 package suitable for a variety of applications that require high-efficiency power switching and power management. The device has robust performance and reliability, suitable for a variety of electronic devices and systems.
The VBsemi 2N0612-VB is a high-performance N-Channel MOSFET in a TO263 package suitable for a variety of applications that require high-efficiency power switching and power management. The device has robust performance and reliability, suitable for a variety of electronic devices and systems.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N-Channel | 60V | 3V | 150A | 4mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N-Channel | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N-Channel | 60V | 3V | 150A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N-Channel | 60V | 3V | 150A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N-Channel |
### Detailed Specifications
- **Package**: TO263
- **Configuration**: Single N-Channel
- **VDS (drain-source voltage)**: 60V
- **VGS (gate-source voltage)**: ±20V
- **Vth (threshold voltage)**: 3V
- **RDS(ON) (drain-source resistance)**: 4mΩ @ VGS = 10V
- **ID (continuous drain current)**: 150A
- **Technology**: Trench
- **Package**: TO263
- **Configuration**: Single N-Channel
- **VDS (drain-source voltage)**: 60V
- **VGS (gate-source voltage)**: ±20V
- **Vth (threshold voltage)**: 3V
- **RDS(ON) (drain-source resistance)**: 4mΩ @ VGS = 10V
- **ID (continuous drain current)**: 150A
- **Technology**: Trench
Domain and module applications：
### Application Examples
1. **Electric Vehicle Drive**:
2N0612-VB can be used for power switching and power management in electric vehicle drives. Its high current handling capability and low on-resistance make it an ideal choice for electric vehicles, helping to improve the performance and efficiency of the vehicle.
2. **Power Module**:
This MOSFET can be used for power switching and control in various power modules. Its stable performance and high current handling capability make it a key component in various power applications.
3. **Industrial Drive**:
In industrial drives, 2N0612-VB can be used for power switching and control. Its stable performance and high current handling capability make it a key component in industrial automation systems.
4. **LED Lighting**:
Due to its high current handling capability and low on-resistance, this device can be used for power switching and control in LED lighting systems, helping to improve the efficiency and stability of lighting systems.
In general, VBsemi 2N0612-VB MOSFET can play an important role in electric vehicle drives, power modules, industrial drives and LED lighting, providing high-efficiency power switching and power management solutions for various applications.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
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