Product parameter：
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds2.5 |
Rds4.5 |
Rds10 |
Technology |
| TO247 |
Single-N |
650V |
30（±V） |
3.5V |
11A |
|
|
800 (mΩ) |
Plannar |
VBP165R11 detailed parameter description:
- Model: VBP165R11
- Brand: VBsemi
-Package: TO247
- Type: Single N-type power MOSFET
- Rated voltage (VDS): 650V
- Gate-source voltage (VGS): ㊣30V
- Threshold voltage (Vth): 3.5V
- Drain-source resistance (m次) at VGS=10V: 800
- Drain current (ID): 11A
- Technology: Plannar
Domain and module applications：
Application examples:
1. Industrial power system: VBP165R11 can be used in switching power supplies, inverters and frequency converters in industrial power systems to provide efficient and stable power conversion and control functions.
2. Electric vehicle controller: In electric vehicle controllers, this product can be used as a power switching device for motor control and power output of electric vehicles, with excellent power density and thermal stability.
3. Solar power generation system: In a solar power generation system, VBP165R11 can be used as a key component of a solar inverter to convert DC power generated by photovoltaic panels into AC power to supply power to homes and industrial facilities.
These are examples only, actual application depends on specific design and system requirements.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
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