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2N03L08-VB TO263 Product details
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### Product Introduction Details
**VBsemi 2N03L08-VB TO263** is a high performance single N-channel MOSFET manufactured using advanced trench technology. With high current handling capability and low on-resistance, the device is suitable for power management and switching applications requiring high efficiency and high power density.
**VBsemi 2N03L08-VB TO263** is a high performance single N-channel MOSFET manufactured using advanced trench technology. With high current handling capability and low on-resistance, the device is suitable for power management and switching applications requiring high efficiency and high power density.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N-Channel | 30V | 1.7V | 98A | 2.7mΩ | 2.4mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N-Channel | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N-Channel | 30V | 1.7V | 98A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N-Channel | 30V | 1.7V | 98A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N-Channel |
### Detailed parameter description
- **Model**: 2N03L08-VB
- **Package**: TO263
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 30V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 1.7V
- **On-resistance (RDS(ON))**:
- 2.7mΩ @ VGS=4.5V
- 2.4mΩ @ VGS=10V
- **Drain current (ID)**: 98A
- **Technology**: Trench
- **Model**: 2N03L08-VB
- **Package**: TO263
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 30V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 1.7V
- **On-resistance (RDS(ON))**:
- 2.7mΩ @ VGS=4.5V
- 2.4mΩ @ VGS=10V
- **Drain current (ID)**: 98A
- **Technology**: Trench
Domain and module applications：
### Applicable fields and modules
**1. Power management**
2N03L08-VB TO263 MOSFET is suitable for high power density power management modules. Its high current handling capability and low on-resistance make it excel in DC-DC converters, AC-DC adapters and battery management systems.
**2. Electric vehicles (EV)**
In the motor control and drive modules of electric vehicles, this MOSFET can handle high current and high voltage, ensuring the efficient operation and safety of electric vehicles.
**3. Industrial control**
In industrial control systems, 2N03L08-VB TO263 can be used in high voltage load switches and inverter modules to improve the efficiency and reliability of equipment.
**4. Servers and data centers**
In the power management systems of servers and data centers, this MOSFET can be used for high power density power distribution and load switching to ensure stable operation of equipment.
**5. Solar Inverter**
In solar photovoltaic inverters, 2N03L08-VB TO263 can efficiently convert and manage the energy generated by solar panels, ensuring efficient operation and long-term stability of the system.
In summary, VBsemi 2N03L08-VB TO263 MOSFET has a wide range of applications in multiple fields and modules, and is an ideal choice for power management and switching applications that require high power density and high efficiency.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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