Product introduction:
**Product Introduction:**
VBP165R10 is a unipolar N-type field effect transistor launched by VBsemi. Features 650V drain-source voltage (VDS), 30V gate-source voltage (VGS), 3.5V threshold voltage (Vth), gate-source resistance at 10V gate-source voltage, and 10A drain current . Manufactured using Plannar technology and packaged in TO247, it is suitable for various power supplies and circuit modules.
**Detailed parameter description:**
- VDS(V): drain-source voltage, 650V
- VGS(±V): Gate-source voltage, ±30V
- Vth(V): threshold voltage, 3.5V
- VGS=10V(mΩ): Gate-source resistance (VGS=10V), 1100mΩ
- ID (A): Drain current, 10A
- Technology: manufacturing technology, Plannar
-Package:TO247
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Domain and module applications:
**Applicable areas and module examples:**
1. **Power electronic module**: Since VBP165R10 has high drain-source voltage and moderate gate-source resistance, it is suitable for various power electronic modules, such as switching power supplies, inverters, power amplifiers, etc.
2. **Electric vehicle power supply system**: In the power supply system of electric vehicles, components that need to withstand high voltage and high current, VBP165R10 can be used as the power switching device of electric vehicles.
3. **Industrial automation equipment**: In various industrial automation equipment, components that need to control current and voltage are required. VBP165R10 can be used in motor drivers, industrial controllers and other modules.
4. **Solar Inverter**: In the solar power generation system, DC power needs to be converted into AC power. VBP165R10 can be used as a key component in the solar inverter to achieve energy conversion and power control.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support:
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