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2N03L04-VB TO263 Product details
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### VBsemi 2N03L04-VB MOSFET Product Overview
The VBsemi 2N03L04-VB is a high performance single N-channel MOSFET designed for a variety of power management applications. This MOSFET is packaged in a TO263 package for medium power applications. It uses trench technology, has very low on-resistance and high current carrying capability, and is suitable for applications requiring high power and high efficiency.
The VBsemi 2N03L04-VB is a high performance single N-channel MOSFET designed for a variety of power management applications. This MOSFET is packaged in a TO263 package for medium power applications. It uses trench technology, has very low on-resistance and high current carrying capability, and is suitable for applications requiring high power and high efficiency.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N-Channel | 30V | 1.7V | 98A | 2.7mΩ | 2.4mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N-Channel | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N-Channel | 30V | 1.7V | 98A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N-Channel | 30V | 1.7V | 98A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N-Channel |
### Detailed Specifications
- **Package:** TO263
- **Configuration:** Single N-channel
- **VDS (Drain-Source Voltage):** 30V
- **VGS (Gate-Source Voltage):** ±20V
- **Vth (Gate Threshold Voltage):** 1.7V
- **RDS(ON) (On-Resistance):**
- 2.7mΩ @ VGS = 4.5V
- 2.4mΩ @ VGS = 10V
- **ID (Continuous Drain Current):** 98A
- **Technology:** Trench
- **Package:** TO263
- **Configuration:** Single N-channel
- **VDS (Drain-Source Voltage):** 30V
- **VGS (Gate-Source Voltage):** ±20V
- **Vth (Gate Threshold Voltage):** 1.7V
- **RDS(ON) (On-Resistance):**
- 2.7mΩ @ VGS = 4.5V
- 2.4mΩ @ VGS = 10V
- **ID (Continuous Drain Current):** 98A
- **Technology:** Trench
Domain and module applications：
### Applications and Use Cases
VBsemi 2N03L04-VB MOSFET is suitable for various fields and modules:
1. **Power Modules:**
- **DC-DC Converter:** Power switch for medium power DC-DC converter, providing stable output voltage and high efficiency.
- **DC-AC Inverter:** Used to control power switch in DC-AC inverter to improve energy conversion efficiency.
2. **Battery Management System:**
- **Battery Charge and Discharge Control:** Power switch for controlling battery charge and discharge, ensuring battery safety and high efficiency.
3. **Medical Equipment:**
- **Medical Imaging Equipment:** Power switch for medical imaging equipment, ensuring accurate imaging and efficient energy utilization.
4. **Power tools:**
- **Electric drills and electric saws:** Used to control the power switch of power tools, providing high efficiency and high power output.
5. **Automotive electronics:**
- **Car chargers:** Used for power switches in car chargers, providing high efficiency and safety charging services.
VBsemi 2N03L04-VB MOSFET has extremely low on-resistance and high current carrying capacity, suitable for a variety of high power and high efficiency applications, including power modules, battery management systems, medical equipment, etc.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
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