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VBP165R08 Product details

Product introduction:

Product introduction:
VBsemi's VBP165R08 is a Single N field effect transistor manufactured using Plannar technology. Features a drain-to-source voltage (VDS) of 650V, a gate-source voltage (VGS) of 30V, and a threshold voltage (Vth) of 3.5V. At VGS=10V, the drain-source resistance (RDS(on)) is 1000mΩ and the maximum drain current (ID) is 8A. The package form is TO247.

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Product parameter:

VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds2.5 Rds4.5 Rds10 Technology
TO247 Single-N 650V 30(±V) 3.5V 8A 1000 (mΩ) Plannar
Detailed parameter description:
- Voltage parameters: drain-source voltage (VDS) is 650V, gate-source voltage (VGS) is ㊣30V, threshold voltage (Vth) is 3.5V.
- Current parameters: When VGS=10V, the drain-source resistance (RDS(on)) is 1000m次, and the maximum drain current (ID) is 8A.
- Technology: Made with Plannar technology.

Domain and module applications:

Examples of applicable fields and modules:
1. Industrial power module: Due to its high drain-source voltage and current capability, VBP165R08 can be used in high-power switching power supplies or inverters in industrial power modules.
2. High-frequency modulation: Its low drain-source resistance makes it suitable for high-frequency modulation modules, such as power amplifiers in broadcast or communication systems.
3. Solar inverter: In the field of renewable energy, VBP165R08 can be used as a power switch module in a solar inverter to convert solar energy into usable electrical energy.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features

Technical support:

* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours

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