VBP165R08 Product details
Product introduction:
VBsemi's VBP165R08 is a Single N field effect transistor manufactured using Plannar technology. Features a drain-to-source voltage (VDS) of 650V, a gate-source voltage (VGS) of 30V, and a threshold voltage (Vth) of 3.5V. At VGS=10V, the drain-source resistance (RDS(on)) is 1000mΩ and the maximum drain current (ID) is 8A. The package form is TO247.
File download
Download PDF document
Download now
Product parameter:
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 650V | 30(±V) | 3.5V | 8A | 1000 (mΩ) | Plannar |
- Voltage parameters: drain-source voltage (VDS) is 650V, gate-source voltage (VGS) is ㊣30V, threshold voltage (Vth) is 3.5V.
- Current parameters: When VGS=10V, the drain-source resistance (RDS(on)) is 1000m次, and the maximum drain current (ID) is 8A.
- Technology: Made with Plannar technology.
Domain and module applications:
1. Industrial power module: Due to its high drain-source voltage and current capability, VBP165R08 can be used in high-power switching power supplies or inverters in industrial power modules.
2. High-frequency modulation: Its low drain-source resistance makes it suitable for high-frequency modulation modules, such as power amplifiers in broadcast or communication systems.
3. Solar inverter: In the field of renewable energy, VBP165R08 can be used as a power switch module in a solar inverter to convert solar energy into usable electrical energy.
Technical support:
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
中文
English
Back to previous page
Click for larger image