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28NM50N-VB TO247 Product details
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### VBsemi 28NM50N-VB MOSFET Product Overview
The VBsemi 28NM50N-VB is a high performance single N-channel MOSFET designed for various power management applications. This MOSFET is packaged in a TO247 package for high power applications. It uses SJ_Multi-EPI technology, has low on-resistance and high current carrying capability, and is suitable for applications requiring high power and high efficiency.
The VBsemi 28NM50N-VB is a high performance single N-channel MOSFET designed for various power management applications. This MOSFET is packaged in a TO247 package for high power applications. It uses SJ_Multi-EPI technology, has low on-resistance and high current carrying capability, and is suitable for applications requiring high power and high efficiency.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO247 | Single-N-Channel | 500V | 3.8V | 40A | 80mΩ | SJ_Multi-EPI |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N-Channel | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N-Channel | 500V | 3.8V | 40A | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N-Channel | 500V | 3.8V | 40A | SJ_Multi-EPI |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO247 | Single-N-Channel |
### Detailed Specifications
- **Package:** TO247
- **Configuration:** Single N-channel
- **VDS (Drain-Source Voltage):** 500V
- **VGS (Gate-Source Voltage):** ±30V
- **Vth (Gate Threshold Voltage):** 3.8V
- **RDS(ON) (On-Resistance):** 80mΩ @ VGS = 10V
- **ID (Continuous Drain Current):** 40A
- **Technology:** SJ_Multi-EPI
- **Package:** TO247
- **Configuration:** Single N-channel
- **VDS (Drain-Source Voltage):** 500V
- **VGS (Gate-Source Voltage):** ±30V
- **Vth (Gate Threshold Voltage):** 3.8V
- **RDS(ON) (On-Resistance):** 80mΩ @ VGS = 10V
- **ID (Continuous Drain Current):** 40A
- **Technology:** SJ_Multi-EPI
Domain and module applications：
### Applications and Use Cases
VBsemi 28NM50N-VB MOSFET is suitable for various fields and modules:
1. **Industrial Power System:**
- **High Voltage DC Power Supply:** Used in the switching circuit of industrial-grade high voltage DC power supply to ensure stable power output.
- **Power Factor Correction:** In the power factor correction device, it is used to control the current and voltage to improve the utilization of electric energy.
2. **Electric Vehicle Charging Pile:**
- **Charging Pile Controller:** Used to control the power switch of the charging pile to provide high efficiency and safety charging services.
3. **Solar Inverter:**
- **Inverter Control:** Used in the solar inverter to control the current and voltage to improve the energy conversion efficiency.
4. **Industrial Automation:**
- **PLC Controller:** Used for power switching and control in factory automation systems to ensure high efficiency and stability.
5. **Communication Infrastructure:**
- **Base Station Equipment:** Used for power control in communication base station equipment to ensure stable and efficient operation of the equipment.
VBsemi 28NM50N-VB MOSFET has the characteristics of high power and high efficiency, and is suitable for a variety of high power and high efficiency applications, including industrial power systems, electric vehicle charging piles, solar inverters, etc.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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