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28N50H-VB Product details
Back to previous pageProduct introduction：
### Product Introduction
28N50H-VB is a single N-channel MOSFET in TO3P package provided by VBsemi. The device has high drain voltage and moderate on-resistance, suitable for a variety of high voltage and high power applications. It adopts SJ_Multi-EPI technology, providing excellent electrical performance and reliability.
28N50H-VB is a single N-channel MOSFET in TO3P package provided by VBsemi. The device has high drain voltage and moderate on-resistance, suitable for a variety of high voltage and high power applications. It adopts SJ_Multi-EPI technology, providing excellent electrical performance and reliability.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO3P | Single-N-Channel | 600V | 3.5V | 20A | 190mΩ | SJ_Multi-EPI |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO3P | Single-N-Channel | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO3P | Single-N-Channel | 600V | 3.5V | 20A | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO3P | Single-N-Channel | 600V | 3.5V | 20A | SJ_Multi-EPI |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO3P | Single-N-Channel |
### Detailed parameter description
- **Package type**: TO3P
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 600V
- **Gate-source voltage (VGS)**: ±30V
- **Gate threshold voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**: 190mΩ @ VGS=10V
- **Drain current (ID)**: 20A
- **Technology**: SJ_Multi-EPI
- **Package type**: TO3P
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 600V
- **Gate-source voltage (VGS)**: ±30V
- **Gate threshold voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**: 190mΩ @ VGS=10V
- **Drain current (ID)**: 20A
- **Technology**: SJ_Multi-EPI
Domain and module applications：
### Application Fields and Modules
28N50H-VB MOSFET has a wide range of applications in multiple fields and modules. Here are some typical application examples:
1. **Industrial Power Supply**:
Due to its high drain voltage and moderate on-resistance, this device is suitable for switching power supplies, inverters and other components in industrial power systems, providing efficient power conversion and stable power output.
2. **Power Transmission**:
In power transmission and distribution systems, 28N50H-VB can be used as a high-voltage switching device to help control the flow of power and ensure safe and stable operation of the system.
3. **Medical Equipment**:
This MOSFET can be used in high-voltage power supplies and motor drivers in medical equipment to provide reliable power transmission and control functions.
4. **EV Charging Station**:
In EV charging stations, the 28N50H-VB can be used as a power switching device to help achieve efficient battery charging and discharging processes.
5. **Solar Inverter**:
The device is suitable for the power switching circuit in the solar inverter, which converts solar energy into electrical energy and provides it to the grid.
The above application examples show the versatility and applicability of the 28N50H-VB, making it an ideal choice for a variety of high-voltage and high-power electronic systems.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
