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28DMG9926UDM-7-VB Product details
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### Product Introduction Details
**VBsemi 28DMG9926UDM-7-VB SOT23-6** is a high-performance dual N-channel and N-channel MOSFET manufactured using advanced trench technology. The device has high reliability and low on-resistance and is suitable for power management and switching applications requiring high efficiency and high power density.
**VBsemi 28DMG9926UDM-7-VB SOT23-6** is a high-performance dual N-channel and N-channel MOSFET manufactured using advanced trench technology. The device has high reliability and low on-resistance and is suitable for power management and switching applications requiring high efficiency and high power density.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| SOT23-6 | Dual-N+N-Channel | 20V | 0.5~1.5V | 6A | 28mΩ | 24mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| SOT23-6 | Dual-N+N-Channel | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| SOT23-6 | Dual-N+N-Channel | 20V | 0.5~1.5V | 6A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| SOT23-6 | Dual-N+N-Channel | 20V | 0.5~1.5V | 6A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| SOT23-6 | Dual-N+N-Channel |
### Detailed parameter description
- **Model**: 28DMG9926UDM-7-VB
- **Package**: SOT23-6
- **Configuration**: Dual N-channel and N-channel
- **Drain-source voltage (VDS)**: 20V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 0.5~1.5V
- **On-resistance (RDS(ON))**:
- 28mΩ @ VGS=2.5V
- 24mΩ @ VGS=4.5V
- **Drain current (ID)**: 6A
- **Technology**: Trench
Domain and module applications：
### Applicable fields and modules
**1. Mobile devices**
28DMG9926UDM-7-VB SOT23-6 MOSFET is suitable for power management modules in mobile devices such as smartphones, tablets and portable audio devices. Its small size and high performance make it an ideal choice for mobile devices.
**2. Power converters**
In DC-DC converters and AC-DC adapters, this MOSFET can be used for high-efficiency power conversion. Its low on-resistance helps reduce energy loss and improve conversion efficiency.
**3. Battery management system**
In battery management systems, this MOSFET can be used for battery charge and discharge control and protection. Its high reliability and low on-resistance help extend battery life and improve safety.
**4. Automotive electronics**
In automotive electronic systems, this MOSFET can be used for power management and motor drive in on-board chargers, electric vehicles and hybrid vehicles. Its high withstand voltage and high reliability are suitable for the requirements of automotive environments.
**5. Industrial Control**
In industrial control systems, this MOSFET can be used in high-voltage load switches and inverter modules. Its high on-current and low on-resistance help improve system efficiency and reliability.
In summary, VBsemi 28DMG9926UDM-7-VB SOT23-6 MOSFET has a wide range of applications in multiple fields and modules, and is an ideal choice for power management and switching applications that require high performance and high reliability.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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