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2851GO-VB Product details
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### Product Overview: 2851GO-VB
2851GO-VB is a dual N+P channel MOSFET using trench technology with high efficiency and low power consumption. It uses TSSOP8 package and is suitable for space-constrained applications. With low on-resistance and high withstand voltage, this MOSFET is suitable for power management and power control applications that require high efficiency and reliability.
2851GO-VB is a dual N+P channel MOSFET using trench technology with high efficiency and low power consumption. It uses TSSOP8 package and is suitable for space-constrained applications. With low on-resistance and high withstand voltage, this MOSFET is suitable for power management and power control applications that require high efficiency and reliability.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TSSOP8 | Dual-N+P-Channel | ±30V | 2/-2V | 6.2/5A | 2/14mΩ | 2/7mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TSSOP8 | Dual-N+P-Channel | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TSSOP8 | Dual-N+P-Channel | ±30V | 2/-2V | 6.2/5A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TSSOP8 | Dual-N+P-Channel | ±30V | 2/-2V | 6.2/5A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TSSOP8 | Dual-N+P-Channel |
### Detailed Specifications
- **Package**: TSSOP8
- **Configuration**: Dual N+P Channel
- **Drain-Source Voltage (VDS)**: ±30V
- **Gate-Source Voltage (VGS)**: ±20V
- **Threshold Voltage (Vth)**: 2V (N Channel) / -2V (P Channel)
- **On-Resistance (RDS(ON))**:
- 2mΩ (N Channel) @ VGS = 4.5V
- 14mΩ (P Channel) @ VGS = 4.5V
- 2mΩ (N Channel) @ VGS = 10V
- 7mΩ (P Channel) @ VGS = 10V
- **Drain current (ID)**:
- 6.2A (N-channel)
- 5A (P-channel)
- **Technology**: Trench technology
- **Package**: TSSOP8
- **Configuration**: Dual N+P Channel
- **Drain-Source Voltage (VDS)**: ±30V
- **Gate-Source Voltage (VGS)**: ±20V
- **Threshold Voltage (Vth)**: 2V (N Channel) / -2V (P Channel)
- **On-Resistance (RDS(ON))**:
- 2mΩ (N Channel) @ VGS = 4.5V
- 14mΩ (P Channel) @ VGS = 4.5V
- 2mΩ (N Channel) @ VGS = 10V
- 7mΩ (P Channel) @ VGS = 10V
- **Drain current (ID)**:
- 6.2A (N-channel)
- 5A (P-channel)
- **Technology**: Trench technology
Domain and module applications：
### Application and usage scenarios
1. **Power management**:
- **Power adapter**: Due to the dual N+P channel structure, it can be used in various types of power adapters to provide high-efficiency power conversion.
- **Laptop**: Applicable to the power switch in the power management circuit of the laptop, providing efficient power management.
2. **Battery management**:
- **Mobile device**: In mobile devices, it can be used for the power switch in the battery management circuit, providing efficient battery management and charge and discharge control.
- **Portable electronic products**: Applicable to power management in portable electronic products, providing efficient power control and management.
3. **Automotive electronics**:
- **In-vehicle electronic systems**: In automotive electronic systems, it can be used for power management and power control of various in-vehicle electronic devices, providing efficient power management.
- **Electric vehicles**: Applicable to motor control and battery management systems in electric vehicles, providing efficient electric vehicle performance.
2851GO-VB is suitable for a variety of power management and control application scenarios, providing engineers and designers with a high-performance power management and power control solution.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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