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27NM60ND-VB Product details
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### VBsemi 27NM60ND-VB MOSFET Product Overview
VBsemi 27NM60ND-VB is a high-performance N-Channel MOSFET in TO247 package, suitable for a variety of applications requiring high-efficiency power switching and power management. The device has robust performance and reliability, suitable for a variety of electronic devices and systems.
VBsemi 27NM60ND-VB is a high-performance N-Channel MOSFET in TO247 package, suitable for a variety of applications requiring high-efficiency power switching and power management. The device has robust performance and reliability, suitable for a variety of electronic devices and systems.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO247 | Single-N-Channel | 650V | 3.5V | 47A | 75mΩ | SJ_Multi-EPI |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N-Channel | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N-Channel | 650V | 3.5V | 47A | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N-Channel | 650V | 3.5V | 47A | SJ_Multi-EPI |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO247 | Single-N-Channel |
### Detailed Specifications
- **Package**: TO247
- **Configuration**: Single N-Channel
- **VDS (drain-source voltage)**: 650V
- **VGS (gate-source voltage)**: ±30V
- **Vth (threshold voltage)**: 3.5V
- **RDS(ON) (drain-source resistance)**: 75mΩ @ VGS = 10V
- **ID (continuous drain current)**: 47A
- **Technology**: SJ_Multi-EPI
- **Package**: TO247
- **Configuration**: Single N-Channel
- **VDS (drain-source voltage)**: 650V
- **VGS (gate-source voltage)**: ±30V
- **Vth (threshold voltage)**: 3.5V
- **RDS(ON) (drain-source resistance)**: 75mΩ @ VGS = 10V
- **ID (continuous drain current)**: 47A
- **Technology**: SJ_Multi-EPI
Domain and module applications：
### Application Examples
1. **Power Transmission and Distribution**:
The 27NM60ND-VB can be used for power switching and control in power transmission and distribution systems. Its high drain-source voltage and low on-resistance help improve the efficiency and stability of the system.
2. **Electric Vehicle Charging Pile**:
This MOSFET can be used for power switching and power management in electric vehicle charging piles. Its high current handling capability and stable performance make it a reliable component for electric vehicle charging equipment.
3. **Industrial Drive**:
In industrial drives, the 27NM60ND-VB can be used for power switching and control. Its stable performance and high current handling capability make it a key component in industrial automation systems.
4. **Solar Inverter**:
Due to its high drain-source voltage and low on-resistance, this device can be used for power switching and control in solar inverters, helping to improve the efficiency and reliability of solar cell systems.
In general, the VBsemi 27NM60ND-VB MOSFET can play an important role in fields such as power transmission and distribution, electric vehicle charging piles, industrial drives and solar inverters, providing high-efficiency power switching and power management solutions for various applications.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
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