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270N4F3-VB TO263-7 Product details
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### Product Introduction Details
**VBsemi 270N4F3-VB TO263-7** is a high-performance dual N-channel and N-channel MOSFET manufactured using advanced trench technology. The device has high current handling capability and very low on-resistance, suitable for power management and switching applications requiring high efficiency and high power.
**VBsemi 270N4F3-VB TO263-7** is a high-performance dual N-channel and N-channel MOSFET manufactured using advanced trench technology. The device has high current handling capability and very low on-resistance, suitable for power management and switching applications requiring high efficiency and high power.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO263-7L | Dual-N+N-Channel | 40V | 3V | 200A | 1mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO263-7L | Dual-N+N-Channel | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO263-7L | Dual-N+N-Channel | 40V | 3V | 200A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO263-7L | Dual-N+N-Channel | 40V | 3V | 200A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO263-7L | Dual-N+N-Channel |
### Detailed parameter description
- **Model**: 270N4F3-VB
- **Package**: TO263-7L
- **Configuration**: Dual N-channel and N-channel
- **Drain-source voltage (VDS)**: 40V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 3V
- **On-resistance (RDS(ON))**: 1mΩ @ VGS=10V
- **Drain current (ID)**: 200A
- **Technology**: Trench
Domain and module applications：
### Applicable fields and modules
**1. Electric vehicles (EV)**
270N4F3-VB TO263-7 MOSFET is suitable for motor control and drive modules in electric vehicles. Its high current handling capability and low on-resistance can achieve high-efficiency power conversion, improving the performance and range of electric vehicles.
**2. Solar inverters**
In solar photovoltaic inverters, this MOSFET can efficiently manage and convert the energy generated by solar panels, ensuring the efficient operation and stability of the inverter system.
**3. Industrial power supplies**
270N4F3-VB TO263-7 is suitable for high-power switches and inverter modules in industrial power supplies. Its high current capability and low on-resistance make it perform well in industrial automation equipment and large machinery.
**4. Servers and Data Centers**
In the power management systems of servers and data centers, this MOSFET can be used for efficient power distribution and load switching to ensure stable operation and energy efficiency optimization of the equipment.
**5. Power Modules**
Due to its high current handling capability and low on-resistance, the 270N4F3-VB TO263-7 is suitable for various power modules, including DC-DC converters, AC-DC adapters, and UPS systems, which can improve the efficiency and performance of the modules.
In summary, the VBsemi 270N4F3-VB TO263-7 MOSFET has a wide range of application prospects in multiple fields and modules, and is an ideal choice for high-performance power management and high-power control applications.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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