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26N50-VB Product details
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### VBsemi 26N50-VB MOSFET Product Overview
VBsemi 26N50-VB is a high performance single N-channel MOSFET designed for various power management applications. This MOSFET is packaged in a TO3P package for high power applications. It uses SJ_Multi-EPI technology, has low on-resistance and high voltage carrying capability, and is suitable for applications requiring high reliability and high efficiency.
VBsemi 26N50-VB is a high performance single N-channel MOSFET designed for various power management applications. This MOSFET is packaged in a TO3P package for high power applications. It uses SJ_Multi-EPI technology, has low on-resistance and high voltage carrying capability, and is suitable for applications requiring high reliability and high efficiency.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO3P | Single-N-Channel | 600V | 3.5V | 20A | 190mΩ | SJ_Multi-EPI |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO3P | Single-N-Channel | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO3P | Single-N-Channel | 600V | 3.5V | 20A | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO3P | Single-N-Channel | 600V | 3.5V | 20A | SJ_Multi-EPI |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO3P | Single-N-Channel |
### Detailed Specifications
- **Package:** TO3P
- **Configuration:** Single N-channel
- **VDS (Drain-Source Voltage):** 600V
- **VGS (Gate-Source Voltage):** ±30V
- **Vth (Gate Threshold Voltage):** 3.5V
- **RDS(ON) (On-Resistance):** 190mΩ @ VGS = 10V
- **ID (Continuous Drain Current):** 20A
- **Technology:** SJ_Multi-EPI
- **Package:** TO3P
- **Configuration:** Single N-channel
- **VDS (Drain-Source Voltage):** 600V
- **VGS (Gate-Source Voltage):** ±30V
- **Vth (Gate Threshold Voltage):** 3.5V
- **RDS(ON) (On-Resistance):** 190mΩ @ VGS = 10V
- **ID (Continuous Drain Current):** 20A
- **Technology:** SJ_Multi-EPI
Domain and module applications：
### Applications and Use Cases
VBsemi 26N50-VB MOSFET is suitable for various fields and modules:
1. **Industrial Power System:**
- **High Voltage DC Power Supply:** Due to its high voltage carrying capacity and low on-resistance, it is suitable for the switching circuit of industrial-grade high voltage DC power supply.
- **Power Factor Correction:** In the power factor correction device, it can be used to control the current and voltage.
2. **Electric Vehicle Charging Pile:**
- **Charging Pile Controller:** Used to control the power switch of the charging pile to ensure charging efficiency and safety.
3. **Solar Inverter:**
- **Inverter Control:** Used to control the current and voltage in the solar inverter to improve the energy conversion efficiency.
4. **Industrial Automation:**
- **PLC Controller:** Used for power switching and control in factory automation systems.
5. **Medical equipment:**
- **X-ray generator:** Used to control the power switch of the X-ray generator to ensure accurate X-ray generation.
VBsemi 26N50-VB MOSFET has high reliability, low on-resistance and high voltage carrying capacity, suitable for a variety of high-power applications, including industrial power supplies, electric vehicle charging piles, solar inverters, etc.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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