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26N50L-VB Product details
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### VBsemi 26N50L-VB MOSFET Product Overview
The VBsemi 26N50L-VB is a high-performance N-Channel MOSFET in a TO3P package suitable for a variety of applications requiring high-efficiency power switching and power management. The device has robust performance and reliability, making it an ideal choice for many electronic devices and systems.
The VBsemi 26N50L-VB is a high-performance N-Channel MOSFET in a TO3P package suitable for a variety of applications requiring high-efficiency power switching and power management. The device has robust performance and reliability, making it an ideal choice for many electronic devices and systems.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO3P | Single-N-Channel | 600V | 3.5V | 20A | 190mΩ | SJ_Multi-EPI |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO3P | Single-N-Channel | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO3P | Single-N-Channel | 600V | 3.5V | 20A | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO3P | Single-N-Channel | 600V | 3.5V | 20A | SJ_Multi-EPI |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO3P | Single-N-Channel |
### Detailed Specifications
- **Package**: TO3P
- **Configuration**: Single N-Channel
- **VDS (drain-source voltage)**: 600V
- **VGS (gate-source voltage)**: ±30V
- **Vth (threshold voltage)**: 3.5V
- **RDS(ON) (drain-source resistance)**: 190mΩ @ VGS = 10V
- **ID (continuous drain current)**: 20A
- **Technology**: SJ_Multi-EPI
- **Package**: TO3P
- **Configuration**: Single N-Channel
- **VDS (drain-source voltage)**: 600V
- **VGS (gate-source voltage)**: ±30V
- **Vth (threshold voltage)**: 3.5V
- **RDS(ON) (drain-source resistance)**: 190mΩ @ VGS = 10V
- **ID (continuous drain current)**: 20A
- **Technology**: SJ_Multi-EPI
Domain and module applications：
### Application Examples
1. **Industrial Power Systems**:
The 26N50L-VB can be used for switching power supplies in industrial power systems, such as frequency converters and inverters. Its high drain-source voltage and low on-resistance make it ideal for handling high power, helping to improve the efficiency and performance of industrial equipment.
2. **Solar Inverters**:
This MOSFET is suitable for power switching and power management in solar inverters. Its high voltage handling capability and low on-resistance help to improve the efficiency and stability of solar cell systems.
3. **Electric Vehicle Charging Station**:
In electric vehicle charging stations, the 26N50L-VB can be used for power switching and power management. Its high current handling capability and stable performance make it a reliable component for electric vehicle charging equipment.
4. **High Voltage Direct Current Transmission (HVDC)**:
Due to its high drain-source voltage and low on-resistance, the device can be used for power switching and control in HVDC transmission systems, helping to improve the efficiency and reliability of energy transmission.
In general, the VBsemi 26N50L-VB MOSFET can play an important role in industrial power systems, solar inverters, electric vehicle charging piles and HVDC transmission, providing high-efficiency power switching and power management solutions for various applications.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
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