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26N50L-T3P-T-VB Product details
Back to previous pageProduct introduction：
### Product Introduction
**26N50L-T3P-T-VB** is a single N-channel MOSFET produced by VBsemi and uses a TO3P package. This MOSFET has a drain-source voltage (VDS) of 600V and a gate-source voltage (VGS) of 30V (±). Its turn-on threshold voltage (Vth) is 3.5V, the on-resistance (RDS(ON)) is 190mΩ at a gate-source voltage of 10V, and the maximum drain current (ID) is 20A. It uses SJ_Multi-EPI technology and is suitable for various high-voltage application scenarios.
**26N50L-T3P-T-VB** is a single N-channel MOSFET produced by VBsemi and uses a TO3P package. This MOSFET has a drain-source voltage (VDS) of 600V and a gate-source voltage (VGS) of 30V (±). Its turn-on threshold voltage (Vth) is 3.5V, the on-resistance (RDS(ON)) is 190mΩ at a gate-source voltage of 10V, and the maximum drain current (ID) is 20A. It uses SJ_Multi-EPI technology and is suitable for various high-voltage application scenarios.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO3P | Single-N-Channel | 600V | 3.5V | 20A | 190mΩ | SJ_Multi-EPI |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO3P | Single-N-Channel | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO3P | Single-N-Channel | 600V | 3.5V | 20A | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO3P | Single-N-Channel | 600V | 3.5V | 20A | SJ_Multi-EPI |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO3P | Single-N-Channel |
### Detailed parameter description
| Parameters| Specifications|
|--------------------|----------|
| Package type| TO3P |
| Configuration| Single N-channel|
| Drain-source voltage (VDS) | 600V |
| Gate-source voltage (VGS) | 30V (±) |
| Turn-on threshold voltage (Vth) | 3.5V |
| On-resistance (RDS(ON)) | 190mΩ@VGS=10V|
| Maximum drain current (ID) | 20A |
| Technology| SJ_Multi-EPI |
| Parameters| Specifications|
|--------------------|----------|
| Package type| TO3P |
| Configuration| Single N-channel|
| Drain-source voltage (VDS) | 600V |
| Gate-source voltage (VGS) | 30V (±) |
| Turn-on threshold voltage (Vth) | 3.5V |
| On-resistance (RDS(ON)) | 190mΩ@VGS=10V|
| Maximum drain current (ID) | 20A |
| Technology| SJ_Multi-EPI |
Domain and module applications：
### Applications and Modules
1. **Power Management Module**: 26N50L-T3P-T-VB MOSFET is suitable for power management modules such as switch mode power supply (SMPS), uninterruptible power supply (UPS) and DC-DC converter (DC-DC Converter). These modules require high-efficiency and high-reliability switching components to reduce power loss and improve system performance.
2. **Industrial Control**: In industrial control applications such as motor drives, inverters and servo drives, the high current and high voltage handling capabilities of 26N50L-T3P-T-VB MOSFET make it an ideal choice. These applications require efficient switching devices to handle high currents and voltages while ensuring system stability and reliability.
3. **Photovoltaic Inverter**: Photovoltaic inverters convert DC power generated by solar panels into AC power, and 26N50L-T3P-T-VB MOSFET plays a key role in these inverters. It is able to handle high voltage and current, ensuring efficient operation and long life of the inverter.
4. **Electric Vehicle (EV) Charging Station**: In electric vehicle charging stations, the 26N50L-T3P-T-VB MOSFET is used for efficient power conversion and control. Its high voltage and current capabilities ensure the rapidity and safety of the charging process.
5. **Lighting Control**: In LED lighting and other high-efficiency lighting systems, this MOSFET is used to regulate current and control brightness, ensuring efficient and stable operation of the system.
1. **Power Management Module**: 26N50L-T3P-T-VB MOSFET is suitable for power management modules such as switch mode power supply (SMPS), uninterruptible power supply (UPS) and DC-DC converter (DC-DC Converter). These modules require high-efficiency and high-reliability switching components to reduce power loss and improve system performance.
2. **Industrial Control**: In industrial control applications such as motor drives, inverters and servo drives, the high current and high voltage handling capabilities of 26N50L-T3P-T-VB MOSFET make it an ideal choice. These applications require efficient switching devices to handle high currents and voltages while ensuring system stability and reliability.
3. **Photovoltaic Inverter**: Photovoltaic inverters convert DC power generated by solar panels into AC power, and 26N50L-T3P-T-VB MOSFET plays a key role in these inverters. It is able to handle high voltage and current, ensuring efficient operation and long life of the inverter.
4. **Electric Vehicle (EV) Charging Station**: In electric vehicle charging stations, the 26N50L-T3P-T-VB MOSFET is used for efficient power conversion and control. Its high voltage and current capabilities ensure the rapidity and safety of the charging process.
5. **Lighting Control**: In LED lighting and other high-efficiency lighting systems, this MOSFET is used to regulate current and control brightness, ensuring efficient and stable operation of the system.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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