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26CNE8N-VB TO263 Product details
Back to previous pageProduct introduction：
### Product Introduction
26CNE8N-VB is a high-performance N-channel MOSFET provided by VBsemi, using TO263 package, with high on-current and low on-resistance, which is very suitable for various high-power applications. The device utilizes advanced Trench technology to provide excellent electrical performance and reliability.
26CNE8N-VB is a high-performance N-channel MOSFET provided by VBsemi, using TO263 package, with high on-current and low on-resistance, which is very suitable for various high-power applications. The device utilizes advanced Trench technology to provide excellent electrical performance and reliability.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N-Channel | 80V | 3V | 120A | 10mΩ | 6mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N-Channel | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N-Channel | 80V | 3V | 120A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N-Channel | 80V | 3V | 120A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N-Channel |
### Detailed parameter description
- **Package type**: TO263
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 80V
- **Gate-source voltage (VGS)**: ±20V
- **Gate threshold voltage (Vth)**: 3V
- **On-resistance (RDS(ON))**:
- 10mΩ @ VGS=4.5V
- 6mΩ @ VGS=10V
- **Drain current (ID)**: 120A
- **Technology**: Trench
- **Package type**: TO263
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 80V
- **Gate-source voltage (VGS)**: ±20V
- **Gate threshold voltage (Vth)**: 3V
- **On-resistance (RDS(ON))**:
- 10mΩ @ VGS=4.5V
- 6mΩ @ VGS=10V
- **Drain current (ID)**: 120A
- **Technology**: Trench
Domain and module applications：
### Applications and Modules
26CNE8N-VB MOSFET has a wide range of applications in multiple fields and modules. Here are some typical application examples:
1. **Power Management**:
This MOSFET can be used as the main switch in a switching power supply (SMPS). Due to its low on-resistance and high current handling capability, it can improve power efficiency and reduce heat generation.
2. **Motor Drive**:
In electric vehicles and industrial motor control systems, 26CNE8N-VB can be used as a switching device in the motor drive to provide efficient current transmission and control.
3. **Inverter**:
This device is suitable for solar inverters and uninterruptible power supply (UPS) systems, which can efficiently convert DC to AC and ensure stable system operation.
4. **Load Switch**:
In various load switch applications, such as battery management systems (BMS) and communication equipment, this MOSFET can be used as a high current switching element to provide reliable load control and protection functions.
5. **DC-DC Converter**:
26CNE8N-VB is suitable for high power DC-DC converters, enabling efficient voltage conversion and regulation at high frequencies.
These application examples demonstrate the versatility and high performance of the 26CNE8N-VB, making it an ideal choice for many high power electronic systems.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
