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26CEH8205-VB Product details
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### Product Overview: 26CEH8205-VB
The 26CEH8205-VB is a dual N-channel MOSFET designed with advanced trench technology for high efficiency and low power consumption. It is packaged in a compact SOT23-6 package for space-constrained applications. This MOSFET is ideal for power management, load switching, and other applications requiring efficient power control.
The 26CEH8205-VB is a dual N-channel MOSFET designed with advanced trench technology for high efficiency and low power consumption. It is packaged in a compact SOT23-6 package for space-constrained applications. This MOSFET is ideal for power management, load switching, and other applications requiring efficient power control.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| SOT23-6 | Dual-N+N-Channel | 20V | 0.5~1.5V | 6A | 28mΩ | 24mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| SOT23-6 | Dual-N+N-Channel | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| SOT23-6 | Dual-N+N-Channel | 20V | 0.5~1.5V | 6A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| SOT23-6 | Dual-N+N-Channel | 20V | 0.5~1.5V | 6A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| SOT23-6 | Dual-N+N-Channel |
### Detailed Specifications
- **Package**: SOT23-6
- **Configuration**: Dual N-Channel
- **Drain-Source Voltage (VDS)**: 20V
- **Gate-Source Voltage (VGS)**: ±20V
- **Threshold Voltage (Vth)**: 0.5V to 1.5V
- **On-Resistance (RDS(ON))**:
- 28mΩ @ VGS = 2.5V
- 24mΩ @ VGS = 4.5V
- **Drain Current (ID)**: 6A
- **Technology**: Trench Technology
- **Package**: SOT23-6
- **Configuration**: Dual N-Channel
- **Drain-Source Voltage (VDS)**: 20V
- **Gate-Source Voltage (VGS)**: ±20V
- **Threshold Voltage (Vth)**: 0.5V to 1.5V
- **On-Resistance (RDS(ON))**:
- 28mΩ @ VGS = 2.5V
- 24mΩ @ VGS = 4.5V
- **Drain Current (ID)**: 6A
- **Technology**: Trench Technology
Domain and module applications：
### Applications and usage scenarios
1. **Power management**:
- **DC-DC converter**: 26CEH8205-VB can be used in DC-DC converters to achieve voltage regulation for consumer electronics, improve efficiency and thermal performance.
- **Battery protection circuit**: Due to its low on-resistance, it is very suitable for battery protection circuits, ensuring minimum power consumption and heat generation.
2. **Load switch**:
- **Switching regulator**: Its high current capacity and low on-resistance make it very suitable for switching regulators in power supplies, providing reliable performance in load switching applications.
- **LED driver**: This MOSFET can be used in LED drivers to provide efficient switching control to control the brightness and power consumption of LEDs.
3. **Motor control**:
- **Brushless DC motor controller**: In motor control applications, 26CEH8205-VB can be used in brushless DC motor controllers, providing precise control and efficient operation.
- **Actuator Driver**: Suitable for actuator driver circuits in automotive and industrial applications, ensuring robust performance and long life.
By leveraging its advanced channel technology and dual N-channel configuration, the 26CEH8205-VB delivers high efficiency and reliability in a variety of power management and control applications, making it a versatile choice for engineers and designers.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
