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VBP165R04 Product details
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**Product Introduction:**
VBP165R04 is a single N-channel MOSFET produced by VBsemi, manufactured using Plannar technology, and packaged in TO247. The product features a drain-to-source voltage (VDS) of up to 650V, has low on-resistance, and is capable of withstanding high current loads. Suitable for various occasions requiring high power switching and power management.
VBP165R04 is a single N-channel MOSFET produced by VBsemi, manufactured using Plannar technology, and packaged in TO247. The product features a drain-to-source voltage (VDS) of up to 650V, has low on-resistance, and is capable of withstanding high current loads. Suitable for various occasions requiring high power switching and power management.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 650V | 30（±V） | 3.5V | 4A | 2200 (mΩ) | Plannar |
**Detailed parameter description:**
- Brand: VBsemi
- Model: VBP165R04
- Type: Single N-channel MOSFET
- Drain-source voltage (VDS): 650V
- Gate-source voltage (VGS): ㊣30V
- Threshold voltage (Vth): 3.5V
- On-resistance at gate-source voltage 10V: 2200 m次
- Maximum drain current (ID): 4A
- Technology: Plannar
-Package:TO247
- Brand: VBsemi
- Model: VBP165R04
- Type: Single N-channel MOSFET
- Drain-source voltage (VDS): 650V
- Gate-source voltage (VGS): ㊣30V
- Threshold voltage (Vth): 3.5V
- On-resistance at gate-source voltage 10V: 2200 m次
- Maximum drain current (ID): 4A
- Technology: Plannar
-Package:TO247
Domain and module applications：
**Examples of applicable fields and modules:**
1. **Industrial power module**: VBP165R04 is suitable for industrial power modules, such as AC-DC converters, DC-DC converters, etc. Its high withstand voltage and low on-resistance characteristics enable it to provide reliable power switching functionality in industrial environments.
2. **Electric vehicle charging pile**: In electric vehicle charging piles, this type of MOSFET can be used for the power management and power switching functions of electric vehicle charging piles. Its high voltage and high current characteristics enable it to withstand high voltage and current loads in charging piles.
3. **UPS (Uninterruptible Power Supply) System**: In a UPS system, VBP165R04 can be used in the power switching circuit of the UPS system to ensure continuous power supply during a power outage. Its high withstand voltage and high current characteristics make it an important part of the UPS system.
4. **Industrial Drivers**: In industrial drivers, this type of MOSFET can be used to control various motors, drives and industrial equipment. Its high voltage and low on-resistance characteristics allow it to withstand high voltage and current loads in industrial environments.
1. **Industrial power module**: VBP165R04 is suitable for industrial power modules, such as AC-DC converters, DC-DC converters, etc. Its high withstand voltage and low on-resistance characteristics enable it to provide reliable power switching functionality in industrial environments.
2. **Electric vehicle charging pile**: In electric vehicle charging piles, this type of MOSFET can be used for the power management and power switching functions of electric vehicle charging piles. Its high voltage and high current characteristics enable it to withstand high voltage and current loads in charging piles.
3. **UPS (Uninterruptible Power Supply) System**: In a UPS system, VBP165R04 can be used in the power switching circuit of the UPS system to ensure continuous power supply during a power outage. Its high withstand voltage and high current characteristics make it an important part of the UPS system.
4. **Industrial Drivers**: In industrial drivers, this type of MOSFET can be used to control various motors, drives and industrial equipment. Its high voltage and low on-resistance characteristics allow it to withstand high voltage and current loads in industrial environments.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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