中文
English
25T03GH-VB Product details
Back to previous pageProduct introduction：
### 1. Product Introduction
**Model: 25T03GH-VB**
VBsemi's 25T03GH-VB is a single N-channel MOSFET that uses Trench technology. The device has low voltage, low on-resistance and other characteristics, suitable for a variety of low-power power electronic applications. Its TO252 package is suitable for small circuit design and has good heat dissipation performance and reliability.
**Model: 25T03GH-VB**
VBsemi's 25T03GH-VB is a single N-channel MOSFET that uses Trench technology. The device has low voltage, low on-resistance and other characteristics, suitable for a variety of low-power power electronic applications. Its TO252 package is suitable for small circuit design and has good heat dissipation performance and reliability.
File download
Download PDF document
Download now
Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N-Channel | 30V | 1.7V | 70A | 30mΩ | 9mΩ | 7mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N-Channel | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N-Channel | 30V | 1.7V | 70A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N-Channel | 30V | 1.7V | 70A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N-Channel |
### 2. Detailed parameter description
- **Package type**: TO252
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 30V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 1.7V
- **On-resistance (RDS(ON))**: 9mΩ @ VGS=4.5V, 7mΩ @ VGS=10V
- **Continuous leakage current (ID)**: 70A
- **Technology**: Trench technology
- **Package type**: TO252
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 30V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 1.7V
- **On-resistance (RDS(ON))**: 9mΩ @ VGS=4.5V, 7mΩ @ VGS=10V
- **Continuous leakage current (ID)**: 70A
- **Technology**: Trench technology
Domain and module applications：
### 3. Application fields and module examples
**1. Battery management**
25T03GH-VB is suitable for switching circuits in portable devices and battery management systems. Its low on-resistance and low voltage drop characteristics can improve energy conversion efficiency and extend battery life.
**2. Handheld devices**
This MOSFET can be used in battery management modules and power management systems in handheld devices. Its high current carrying capacity and low on-resistance help to extend battery life and increase the use time of the device.
**3. Communication equipment**
25T03GH-VB is suitable for power management and signal switching circuits in communication equipment. Its high withstand voltage and high current carrying capacity ensure the stability and reliability of the equipment and are suitable for various communication equipment modules.
**4. Automotive electronics**
This device can be used in the field of automotive electronics, such as switching circuits in vehicle power management and car entertainment systems. Its low on-resistance and high reliability ensure stable operation in automotive environments.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
