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25NM60ND-VB TO247 Product details
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### 25NM60ND-VB TO247 MOSFET Product Introduction
#### 1. Product Introduction
VBsemi's 25NM60ND-VB TO247 is a single N-channel MOSFET that uses SJ_Multi-EPI technology. The device has a high drain-source voltage and moderate on-resistance, suitable for power management applications that require high voltage and medium current handling capabilities.
#### 1. Product Introduction
VBsemi's 25NM60ND-VB TO247 is a single N-channel MOSFET that uses SJ_Multi-EPI technology. The device has a high drain-source voltage and moderate on-resistance, suitable for power management applications that require high voltage and medium current handling capabilities.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO247 | Single-N-Channel | 650V | 3.5V | 47A | 30mΩ | 75mΩ | SJ_Multi-EPI |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N-Channel | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N-Channel | 650V | 3.5V | 47A | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N-Channel | 650V | 3.5V | 47A | SJ_Multi-EPI |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO247 | Single-N-Channel |
#### 2. Detailed parameter description
- **Package**: TO247
- **Configuration**: Single-N-Channel
- **Drain-source voltage (VDS)**: 650V
- **Gate-source voltage (VGS)**: ±30V
- **Threshold voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**: 75mΩ @ VGS=10V
- **Drain current (ID)**: 47A
- **Technology**: SJ_Multi-EPI
- **Package**: TO247
- **Configuration**: Single-N-Channel
- **Drain-source voltage (VDS)**: 650V
- **Gate-source voltage (VGS)**: ±30V
- **Threshold voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**: 75mΩ @ VGS=10V
- **Drain current (ID)**: 47A
- **Technology**: SJ_Multi-EPI
Domain and module applications：
#### 3. Application fields and module examples
25NM60ND-VB TO247 MOSFET is suitable for a variety of fields and modules. Here are some specific application examples:
1. **Power switch**: Due to its high drain-source voltage and moderate on-resistance, 25NM60ND-VB TO247 can be used as a power switch to control the on and off of high-voltage circuits, such as UPS systems, industrial power supplies, etc.
2. **Electric vehicle control**: In electric vehicle control systems, 25NM60ND-VB TO247 can be used for electric vehicle power control to achieve efficient energy conversion and drive control.
3. **Industrial control**: In industrial control equipment, 25NM60ND-VB TO247 can be used as a power switch to control the operation and efficiency of the equipment.
4. **Welding equipment**: In welding equipment, 25NM60ND-VB TO247 can be used to control the power switch to achieve a stable welding process.
5. **Medical equipment**: In medical equipment that requires high voltage and moderate current, 25NM60ND-VB TO247 can be used as a power switch and control device to ensure stable operation and efficient energy conversion of the equipment.
By combining its technical features and specific applications, 25NM60ND-VB TO247 MOSFET provides an efficient and reliable solution to meet the needs of a variety of modern electronic systems.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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