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25NM60ND-VB TO220F Product details
Back to previous pageProduct introduction：
### 25NM60ND-VB Product Introduction
25NM60ND-VB is a high performance single N-channel MOSFET in TO220F package. It is suitable for applications requiring higher voltage and current, with excellent on-resistance and drain current capability. It adopts SJ_Multi-EPI technology, has good performance and reliability, and is suitable for various power management and switching applications.
25NM60ND-VB is a high performance single N-channel MOSFET in TO220F package. It is suitable for applications requiring higher voltage and current, with excellent on-resistance and drain current capability. It adopts SJ_Multi-EPI technology, has good performance and reliability, and is suitable for various power management and switching applications.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N-Channel | 650V | 3.5V | 20A | 30mΩ | 160mΩ | SJ_Multi-EPI |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N-Channel | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N-Channel | 650V | 3.5V | 20A | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N-Channel | 650V | 3.5V | 20A | SJ_Multi-EPI |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N-Channel |
### 25NM60ND-VB Detailed parameter description
- **Package type**: TO220F
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 650V
- **Gate-source voltage (VGS)**: ±30V
- **Threshold voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**: 160mΩ @ VGS=10V
- **Drain current (ID)**: 20A
- **Technology type**: SJ_Multi-EPI
- **Package type**: TO220F
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 650V
- **Gate-source voltage (VGS)**: ±30V
- **Threshold voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**: 160mΩ @ VGS=10V
- **Drain current (ID)**: 20A
- **Technology type**: SJ_Multi-EPI
Domain and module applications：
### Applications and Module Examples
**Power Management**:
25NM60ND-VB can be used for switching and power control in various power management systems. Its high rated voltage and current can meet the needs of high power supplies.
**Industrial Automation**:
In the field of industrial automation, this product can be used for power management and switching of various industrial equipment. Its high performance and reliability make it an ideal choice for the field of industrial automation.
**Electric Vehicle Charging Pile**:
In electric vehicle charging piles, this product can be used for high-voltage switching and power management. Its high rated voltage and current ensure the high efficiency and reliability of electric vehicle charging piles.
**Solar Inverter**:
In solar inverters, this product can be used for high-voltage switching and power control. Its high performance and reliability make it an ideal choice for solar inverters.
The 25NM60ND-VB has demonstrated its superior performance as a high-performance MOSFET through its wide application in a variety of high-voltage and high-performance applications, providing engineers with a reliable solution.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
