中文
English
25N80K5-VB TO220F Product details
Back to previous pageProduct introduction：
### 1. 25N80K5-VB Product Introduction
25N80K5-VB is a single N-channel MOSFET launched by VBsemi, using SJ_Multi-EPI technology, suitable for high voltage and medium current applications. The device has low on-resistance and high reliability, suitable for various power control and switching circuits.
25N80K5-VB is a single N-channel MOSFET launched by VBsemi, using SJ_Multi-EPI technology, suitable for high voltage and medium current applications. The device has low on-resistance and high reliability, suitable for various power control and switching circuits.
File download
Download PDF document
Download now
Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N-Channel | 800V | 3.5V | 20A | 48mΩ | 205mΩ | SJ_Multi-EPI |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N-Channel | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N-Channel | 800V | 3.5V | 20A | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N-Channel | 800V | 3.5V | 20A | SJ_Multi-EPI |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N-Channel |
### 2. Detailed parameter description of 25N80K5-VB
- **Model: ** 25N80K5-VB
- **Package type: ** TO220F
- **Configuration: ** Single N-channel
- **Drain-source voltage (VDS): ** 800V
- **Gate-source voltage (VGS): ** ±30V
- **Gate threshold voltage (Vth): ** 3.5V
- **On-resistance (RDS(ON)): ** 205mΩ @ VGS = 10V
- **Drain current (ID): ** 20A
- **Technology: ** SJ_Multi-EPI
- **Model: ** 25N80K5-VB
- **Package type: ** TO220F
- **Configuration: ** Single N-channel
- **Drain-source voltage (VDS): ** 800V
- **Gate-source voltage (VGS): ** ±30V
- **Gate threshold voltage (Vth): ** 3.5V
- **On-resistance (RDS(ON)): ** 205mΩ @ VGS = 10V
- **Drain current (ID): ** 20A
- **Technology: ** SJ_Multi-EPI
Domain and module applications：
### III. Application fields and module examples of 25N80K5-VB
25N80K5-VB MOSFET is suitable for the following fields and modules:
1. **Power supply:** In high-voltage power supply modules, 25N80K5-VB can be used for switching power supplies and inverters, which can handle high voltage and medium current and provide stable power output.
2. **Power tools:** In industrial power tools and machinery, 25N80K5-VB can be used for motor drive control, providing medium power output and stable performance.
3. **Solar inverter:** In solar cell systems, 25N80K5-VB can be used in inverter modules to achieve the conversion and utilization of solar power.
4. **Medical equipment:** In medical equipment, 25N80K5-VB can be used for power control and switching modules, providing stable power output and reliable performance.
5. **Electric vehicle charging pile:** In electric vehicle charging piles, 25N80K5-VB can be used for power control and stable power modules to provide reliable power support for electric vehicle charging.
From the above examples, it can be seen that 25N80K5-VB plays an important role in various applications requiring high voltage and medium current handling capabilities, providing reliable power control and switching functions for these applications.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
