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25N10L-TN3-T-VB Product details
Back to previous pageProduct introduction：
### 1. Product Introduction
**Model: 25N10L-TN3-T-VB**
VBsemi's 25N10L-TN3-T-VB is a single N-channel MOSFET that uses Trench technology. The device has the characteristics of high withstand voltage and low on-resistance, and is suitable for various medium-power power electronic applications. Its TO252 package is suitable for medium-power circuit design and has good heat dissipation performance and reliability.
**Model: 25N10L-TN3-T-VB**
VBsemi's 25N10L-TN3-T-VB is a single N-channel MOSFET that uses Trench technology. The device has the characteristics of high withstand voltage and low on-resistance, and is suitable for various medium-power power electronic applications. Its TO252 package is suitable for medium-power circuit design and has good heat dissipation performance and reliability.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N-Channel | 100V | 1.8V | 40A | 30mΩ | 35mΩ | 30mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N-Channel | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N-Channel | 100V | 1.8V | 40A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N-Channel | 100V | 1.8V | 40A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N-Channel |
### 2. Detailed parameter description
- **Package type**: TO252
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 100V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 1.8V
- **On-resistance (RDS(ON))**: 35mΩ @ VGS=4.5V, 30mΩ @ VGS=10V
- **Continuous leakage current (ID)**: 40A
- **Technology**: Trench technology
- **Package type**: TO252
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 100V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 1.8V
- **On-resistance (RDS(ON))**: 35mΩ @ VGS=4.5V, 30mΩ @ VGS=10V
- **Continuous leakage current (ID)**: 40A
- **Technology**: Trench technology
Domain and module applications：
### 3. Application fields and module examples
**1. Power management**
25N10L-TN3-T-VB is suitable for medium-power power management modules such as power adapters and DC-DC converters. Its low on-resistance and high withstand voltage characteristics can improve energy conversion efficiency and enable compact design in various electronic devices.
**2. Power tools**
This MOSFET can be used in motor drive circuits in power tools, such as electric drills, electric saws, etc. Its high current carrying capacity and low on-resistance help improve the performance and efficiency of power tools.
**3. Lighting applications**
25N10L-TN3-T-VB is suitable for switching circuits in LED drivers and lighting controllers. Its high withstand voltage and low on-resistance help improve the energy efficiency and stability of lighting systems.
**4. Industrial Control**
This device is suitable for industrial control fields, such as switches and drive circuits in PLCs and industrial robots. Its high reliability and durability ensure stable operation in harsh industrial environments and is suitable for various automation control systems.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
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