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25N10G-TN3-R-VB Product details
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### 25N10G-TN3-R-VB MOSFET Product Introduction
#### 1. Product Introduction
VBsemi's 25N10G-TN3-R-VB is a single N-channel MOSFET that uses Trench technology. The device has high drain-source voltage and low on-resistance, suitable for power management applications that require high voltage and high current handling capabilities.
#### 1. Product Introduction
VBsemi's 25N10G-TN3-R-VB is a single N-channel MOSFET that uses Trench technology. The device has high drain-source voltage and low on-resistance, suitable for power management applications that require high voltage and high current handling capabilities.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N-Channel | 100V | 1.8V | 40A | 100mΩ | 35mΩ | 30mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N-Channel | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N-Channel | 100V | 1.8V | 40A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N-Channel | 100V | 1.8V | 40A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N-Channel |
#### 2. Detailed parameter description
- **Package**: TO252
- **Configuration**: Single-N-Channel
- **Drain-source voltage (VDS)**: 100V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 1.8V
- **On-resistance (RDS(ON))**:
- 35mΩ @ VGS=4.5V
- 30mΩ @ VGS=10V
- **Drain current (ID)**: 40A
- **Technology**: Trench
- **Package**: TO252
- **Configuration**: Single-N-Channel
- **Drain-source voltage (VDS)**: 100V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 1.8V
- **On-resistance (RDS(ON))**:
- 35mΩ @ VGS=4.5V
- 30mΩ @ VGS=10V
- **Drain current (ID)**: 40A
- **Technology**: Trench
Domain and module applications：
#### 3. Application fields and module examples
25N10G-TN3-R-VB MOSFET is suitable for a variety of fields and modules. The following are some specific application examples:
1. **Power converter**: Due to its high drain-source voltage and low on-resistance, 25N10G-TN3-R-VB can be used as a switching device in a power converter to achieve high-efficiency energy conversion.
2. **Motor drive**: In motor drives, 25N10G-TN3-R-VB can be used as a power switch to control the start and stop and speed of the motor, which is suitable for home appliances and industrial equipment.
3. **Power management**: In various types of power management modules, 25N10G-TN3-R-VB can be used for power switches and regulators to provide stable voltage and current output.
4. **LED driver**: In LED lighting applications, 25N10G-TN3-R-VB can be used as a switching device for LED drivers, providing stable current and efficient energy conversion.
5. **Electric vehicle control**: In electric vehicle control systems, 25N10G-TN3-R-VB can be used for electric vehicle power control to achieve efficient energy conversion and drive control.
By combining its technical features and specific applications, 25N10G-TN3-R-VB MOSFET provides an efficient and reliable solution that meets the needs of a variety of modern electronic systems.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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