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25CN10N-VB Product details
Back to previous pageProduct introduction：
### 1. Product Introduction
25CN10N-VB is a high-performance single N-channel MOSFET produced by VBsemi. It is packaged in TO252 and is suitable for medium voltage, high power power switches and motor drives. It uses trench technology and has low on-resistance and high current capability.
25CN10N-VB is a high-performance single N-channel MOSFET produced by VBsemi. It is packaged in TO252 and is suitable for medium voltage, high power power switches and motor drives. It uses trench technology and has low on-resistance and high current capability.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N-Channel | 100V | 1.8V | 45A | 25mΩ | 18mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N-Channel | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N-Channel | 100V | 1.8V | 45A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N-Channel | 100V | 1.8V | 45A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N-Channel |
### 2. Detailed parameter description
- **Model**: 25CN10N-VB
- **Package**: TO252
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 100V
- **Gate-source voltage (VGS)**: 20 (±V)
- **Threshold voltage (Vth)**: 1.8V
- **On-resistance (RDS(ON))**: 18mΩ @ VGS=10V
- **Drain current (ID)**: 45A
- **Technology**: Trench technology (Trench)
- **Model**: 25CN10N-VB
- **Package**: TO252
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 100V
- **Gate-source voltage (VGS)**: 20 (±V)
- **Threshold voltage (Vth)**: 1.8V
- **On-resistance (RDS(ON))**: 18mΩ @ VGS=10V
- **Drain current (ID)**: 45A
- **Technology**: Trench technology (Trench)
Domain and module applications：
### 3. Application fields and module examples
1. **Power switch**: 25CN10N-VB is suitable for medium voltage and high power power switches, such as industrial power supplies, inverters, etc. Its low on-resistance and high drain current enable it to perform well in high power environments.
2. **Motor drive**: In motor drive systems that require high power and high efficiency, 25CN10N-VB can be used as a key component of the motor controller to provide high-efficiency power switching and current control.
3. **Electric vehicle charging pile**: In electric vehicle charging piles, this MOSFET can be used for power switching and current control to ensure safe and fast charging of electric vehicles.
4. **UPS system**: In uninterruptible power supply systems, 25CN10N-VB can be used as a switching element for battery charging and discharging to ensure the stable operation of the UPS system.
5. **LED lighting**: In high-power LED lighting systems, this MOSFET can be used for current control and power switching to ensure stable brightness and long life of LED lamps.
In summary, 25CN10N-VB has broad application prospects in medium-voltage, high-power applications, with stable and reliable performance and efficient power conversion capabilities.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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