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24NM65N-VB TO263 Product details
Back to previous pageProduct introduction：
### 1. Product Introduction
**Model: 24NM65N-VB TO263**
VBsemi's 24NM65N-VB TO263 is a high-performance single N-channel MOSFET manufactured using SJ_Multi-EPI technology. It has a drain-source voltage of 650V and a drain current carrying capacity of 20A, suitable for medium-power applications. This product is packaged in TO263 and has superior thermal and electrical properties, suitable for various power and electronic fields.
**Model: 24NM65N-VB TO263**
VBsemi's 24NM65N-VB TO263 is a high-performance single N-channel MOSFET manufactured using SJ_Multi-EPI technology. It has a drain-source voltage of 650V and a drain current carrying capacity of 20A, suitable for medium-power applications. This product is packaged in TO263 and has superior thermal and electrical properties, suitable for various power and electronic fields.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N-Channel | 650V | 3.5V | 20A | 160mΩ | SJ_Multi-EPI |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N-Channel | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N-Channel | 650V | 3.5V | 20A | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N-Channel | 650V | 3.5V | 20A | SJ_Multi-EPI |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N-Channel |
### 2. Detailed parameter description
- **Model**: 24NM65N-VB TO263
- **Package**: TO263
- **Configuration**: Single N-channel
- **VDS (drain-source voltage)**: 650V
- **VGS (gate-source voltage)**: ±30V
- **Vth (threshold voltage)**: 3.5V
- **RDS(ON) (on-resistance)**: 160mΩ @ VGS=10V
- **ID (drain current)**: 20A
- **Technology**: SJ_Multi-EPI
- **Model**: 24NM65N-VB TO263
- **Package**: TO263
- **Configuration**: Single N-channel
- **VDS (drain-source voltage)**: 650V
- **VGS (gate-source voltage)**: ±30V
- **Vth (threshold voltage)**: 3.5V
- **RDS(ON) (on-resistance)**: 160mΩ @ VGS=10V
- **ID (drain current)**: 20A
- **Technology**: SJ_Multi-EPI
Domain and module applications：
### 3. Application fields and module examples
1. **Power management module**
- **Switching power supply**: 24NM65N-VB TO263 is suitable for switch control in switching power supply, providing efficient power management and stable current output.
- **Power inverter**: Used for switch control in power inverter to achieve efficient power conversion and stable output voltage.
2. **Electric vehicle**
- **Motor driver**: In the motor driver of electric vehicle, 24NM65N-VB TO263 is a key component to provide efficient motor control and drive capability.
- **Charging pile**: Suitable for power management and switch control in electric vehicle charging piles to ensure the safety and stability of the charging process.
3. **Industrial control**
- **Industrial power supply**: Used for power management and switch control in industrial power modules to provide reliable power supply and stability.
- **Industrial drive**: Applicable to switch control in industrial drives to achieve efficient motor drive and energy conversion.
4. **Communication equipment**
- **Communication base station**: In communication base stations, 24NM65N-VB TO263 is a key component that provides efficient power conversion and stable power output.
- **Network equipment**: Applicable to power management and switch control in various network equipment to ensure stable operation and efficient energy consumption of equipment.
Through the application of the above fields and modules, 24NM65N-VB TO263 has demonstrated its stability and reliability in medium-power environments, and is an ideal choice for a variety of high-performance electronic devices and systems.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
