中文
English
24NM60N-VB TO247 Product details
Back to previous pageProduct introduction：
### 1. Product Introduction
**Model: 24NM60N-VB TO247**
VBsemi's 24NM60N-VB TO247 is a high-performance single N-channel MOSFET that uses SJ_Multi-EPI technology. The device has high withstand voltage and low on-resistance, and is suitable for a variety of high-power power electronic applications. Its TO247 package is suitable for medium and high power circuit design, and has good heat dissipation performance and reliability.
**Model: 24NM60N-VB TO247**
VBsemi's 24NM60N-VB TO247 is a high-performance single N-channel MOSFET that uses SJ_Multi-EPI technology. The device has high withstand voltage and low on-resistance, and is suitable for a variety of high-power power electronic applications. Its TO247 package is suitable for medium and high power circuit design, and has good heat dissipation performance and reliability.
File download
Download PDF document
Download now
Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO247 | Single-N-Channel | 650V | 3.5V | 20A | 160mΩ | SJ_Multi-EPI |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N-Channel | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N-Channel | 650V | 3.5V | 20A | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N-Channel | 650V | 3.5V | 20A | SJ_Multi-EPI |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO247 | Single-N-Channel |
### 2. Detailed parameter description
- **Package type**: TO247
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 650V
- **Gate-source voltage (VGS)**: ±30V
- **Threshold voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**: 160mΩ @ VGS=10V
- **Continuous leakage current (ID)**: 20A
- **Technology**: SJ_Multi-EPI technology
- **Package type**: TO247
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 650V
- **Gate-source voltage (VGS)**: ±30V
- **Threshold voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**: 160mΩ @ VGS=10V
- **Continuous leakage current (ID)**: 20A
- **Technology**: SJ_Multi-EPI technology
Domain and module applications：
### 3. Application fields and module examples
**1. Power supply**
24NM60N-VB is suitable for high-power power electronic applications such as switching power supplies and inverters. Its high withstand voltage characteristics and low on-resistance enable efficient energy conversion and are suitable for power management modules in industrial and communication equipment.
**2. Electric vehicles**
This MOSFET can be used for motor control and battery management systems in electric vehicles. Its high current carrying capacity and low on-resistance help improve the performance and energy efficiency of electric vehicles.
**3. Industrial control**
24NM60N-VB is suitable for industrial control fields such as switches and drive circuits in industrial drives and robots. Its high reliability and durability ensure stable operation in harsh industrial environments and are suitable for various automation control systems.
**4. Solar Inverter**
The device can also be used in solar inverters to control the energy conversion between solar panels and the grid. Its high efficiency and low loss help improve the energy conversion efficiency of solar power stations.
**5. Communication Equipment**
24NM60N-VB can be used for power management and signal switching circuits in communication equipment. Its high withstand voltage and high current carrying capacity ensure the stability and reliability of the equipment, and is suitable for various communication equipment modules.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
