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2310-VB TO223 Product details
Back to previous pageProduct introduction：
### 2310-VB TO223 Product Introduction
2310-VB TO223 is a high performance single N-channel MOSFET designed for medium and low voltage and medium and low current applications. It uses trench technology, has low on-resistance and moderate drain current capability, and is suitable for a variety of power management and switching applications.
2310-VB TO223 is a high performance single N-channel MOSFET designed for medium and low voltage and medium and low current applications. It uses trench technology, has low on-resistance and moderate drain current capability, and is suitable for a variety of power management and switching applications.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| SOT223 | Single-N-Channel | 60V | 1.7V | 4.5A | 85mΩ | 76mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| SOT223 | Single-N-Channel | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| SOT223 | Single-N-Channel | 60V | 1.7V | 4.5A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| SOT223 | Single-N-Channel | 60V | 1.7V | 4.5A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| SOT223 | Single-N-Channel |
### 2310-VB TO223 Detailed parameter description
- **Package type**: SOT223
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 60V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 1.7V
- **On-resistance (RDS(ON))**:
- 85mΩ @ VGS=4.5V
- 76mΩ @ VGS=10V
- **Drain current (ID)**: 4.5A
- **Technology type**: Trench
- **Package type**: SOT223
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 60V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 1.7V
- **On-resistance (RDS(ON))**:
- 85mΩ @ VGS=4.5V
- 76mΩ @ VGS=10V
- **Drain current (ID)**: 4.5A
- **Technology type**: Trench
Domain and module applications：
### Applications and Module Examples
**Power Management**:
2310-VB TO223 can be used in low voltage DC-DC converters and regulators in power management systems. Its low on-resistance and moderate drain current capability help reduce power consumption and improve system efficiency.
**LED Driver**:
In LED driver circuits, this product can be used to control current and voltage to ensure stable brightness and long life of LEDs.
**Consumer Electronics**:
In consumer electronics, 2310-VB TO223 can be used in battery management systems and power switches. Its small size and high performance make it suitable for a variety of portable devices.
**Communication Equipment**:
In communication equipment, this product can be used in low power RF modules and signal conditioners. Its low on-resistance ensures high performance and low power consumption.
2310-VB TO223 demonstrates its advantages as a high-performance MOSFET through its excellent performance in a variety of application scenarios, providing an ideal choice for design engineers.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
