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21NM60ND-VB TO220F Product details
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### 21NM60ND-VB TO220F MOSFET Product Introduction
#### 1. Product Introduction
VBsemi's 21NM60ND-VB TO220F is a single N-channel MOSFET that uses SJ_Multi-EPI technology. The device has a high drain-source voltage and moderate on-resistance, suitable for power management applications that require high voltage and medium current handling capabilities.
#### 1. Product Introduction
VBsemi's 21NM60ND-VB TO220F is a single N-channel MOSFET that uses SJ_Multi-EPI technology. The device has a high drain-source voltage and moderate on-resistance, suitable for power management applications that require high voltage and medium current handling capabilities.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N-Channel | 650V | 3.5V | 20A | 160mΩ | SJ_Multi-EPI |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N-Channel | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N-Channel | 650V | 3.5V | 20A | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N-Channel | 650V | 3.5V | 20A | SJ_Multi-EPI |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N-Channel |
#### 2. Detailed parameter description
- **Package**: TO220F
- **Configuration**: Single-N-Channel
- **Drain-source voltage (VDS)**: 650V
- **Gate-source voltage (VGS)**: ±30V
- **Threshold voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**: 160mΩ @ VGS=10V
- **Drain current (ID)**: 20A
- **Technology**: SJ_Multi-EPI
- **Package**: TO220F
- **Configuration**: Single-N-Channel
- **Drain-source voltage (VDS)**: 650V
- **Gate-source voltage (VGS)**: ±30V
- **Threshold voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**: 160mΩ @ VGS=10V
- **Drain current (ID)**: 20A
- **Technology**: SJ_Multi-EPI
Domain and module applications：
#### 3. Application fields and module examples
21NM60ND-VB TO220F MOSFET is suitable for a variety of fields and modules. Here are some specific application examples:
1. **Power switch**: Due to its high drain-source voltage and moderate on-resistance, 21NM60ND-VB TO220F can be used as a power switch to control the on and off of high-voltage circuits, such as UPS systems, industrial power supplies, etc.
2. **Electric vehicle charger**: In electric vehicle chargers, 21NM60ND-VB TO220F can be used as a power switch to achieve efficient charging process control while ensuring safety and stability.
3. **Electric welding machine**: In high-voltage and high-power equipment, such as electric welding machines, 21NM60ND-VB TO220F can be used to control the power switch to achieve a stable welding process.
4. **Gas discharge lamp**: In gas discharge lamps, 21NM60ND-VB TO220F can be used as a switching device for the driver, providing stable current and efficient energy conversion.
5. **Medical equipment**: In medical equipment that requires high voltage and moderate current, 21NM60ND-VB TO220F can be used as a power switch and control device to ensure stable operation and efficient energy conversion of the equipment.
By combining its technical features and specific applications, 21NM60ND-VB TO220F MOSFET provides an efficient and reliable solution to meet the needs of a variety of modern electronic systems.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
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