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21N65M5-VB TO247 Product details
Back to previous pageProduct introduction：
### 21N65M5-VB Product Introduction
**21N65M5-VB** is a unipolar N-Channel MOSFET in TO247 package with high voltage and high current handling capability. It uses SJ_Multi-EPI technology to provide stable performance in high voltage environment.
**21N65M5-VB** is a unipolar N-Channel MOSFET in TO247 package with high voltage and high current handling capability. It uses SJ_Multi-EPI technology to provide stable performance in high voltage environment.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO247 | Single-N-Channel | 700V | 3.5V | 47A | 80mΩ | SJ_Multi-EPI |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N-Channel | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N-Channel | 700V | 3.5V | 47A | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N-Channel | 700V | 3.5V | 47A | SJ_Multi-EPI |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO247 | Single-N-Channel |
### Detailed parameter description
| **Parameter** | **Value** |
|---------------------|-----------------------------|
| **Package** | TO247 |
| **Configuration** | Single-N-Channel |
| **Drain-Source Voltage(VDS)** | 700V |
| **Gate-Source Voltage(VGS)** | ±30V |
| **Threshold Voltage(Vth)** | 3.5V |
| **On-Resistance(RDS(ON))** | 80mΩ @ VGS=10V |
| **Continuous Drain Current(ID)** | 47A |
| **Technology** | SJ_Multi-EPI |
| **Parameter** | **Value** |
|---------------------|-----------------------------|
| **Package** | TO247 |
| **Configuration** | Single-N-Channel |
| **Drain-Source Voltage(VDS)** | 700V |
| **Gate-Source Voltage(VGS)** | ±30V |
| **Threshold Voltage(Vth)** | 3.5V |
| **On-Resistance(RDS(ON))** | 80mΩ @ VGS=10V |
| **Continuous Drain Current(ID)** | 47A |
| **Technology** | SJ_Multi-EPI |
Domain and module applications：
### Applicable fields and modules
1. **Power electronics**: 21N65M5-VB can be applied to various power electronic devices, such as power inverters, industrial motor drives, and power transmission equipment, which require power devices that can withstand high voltage and high current to ensure the normal operation of the equipment.
2. **Solar inverter**: In solar inverters, high-voltage and high-current MOSFETs are required to convert the DC power generated by solar panels into AC power. 21N65M5-VB can be used for power switches and regulation circuits in solar inverters.
3. **Industrial control systems**: In industrial control systems, power devices that can withstand high voltage and high current are required to control the operation of various industrial equipment. 21N65M5-VB can be used for power switches and regulation circuits in industrial control systems.
4. **Electric vehicle charging piles**: In electric vehicle charging piles, high-voltage and high-current MOSFETs are required to control the current transmission and charging efficiency. 21N65M5-VB can be used in power conversion and control circuits in charging piles.
5. **LED lighting**: In the field of LED lighting, 21N65M5-VB can be used in LED drivers and controllers to provide stable current and efficient energy utilization.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
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