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21N65M5-VB TO220F Product details
Back to previous pageProduct introduction：
### 1. Product Introduction
**Model: 21N65M5-VB TO220F**
VBsemi's 21N65M5-VB TO220F is a high-performance single N-channel MOSFET that uses SJ_Multi-EPI technology. The device has the characteristics of high withstand voltage and low on-resistance, and is suitable for various high-voltage power electronic applications. Its TO220F package is suitable for medium and high power circuit design, and has good heat dissipation performance and reliability.
**Model: 21N65M5-VB TO220F**
VBsemi's 21N65M5-VB TO220F is a high-performance single N-channel MOSFET that uses SJ_Multi-EPI technology. The device has the characteristics of high withstand voltage and low on-resistance, and is suitable for various high-voltage power electronic applications. Its TO220F package is suitable for medium and high power circuit design, and has good heat dissipation performance and reliability.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N-Channel | 700V | 3.5V | 20A | 160mΩ | SJ_Multi-EPI |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N-Channel | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N-Channel | 700V | 3.5V | 20A | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N-Channel | 700V | 3.5V | 20A | SJ_Multi-EPI |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N-Channel |
### 2. Detailed parameter description
- **Package type**: TO220F
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 700V
- **Gate-source voltage (VGS)**: ±30V
- **Threshold voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**: 160mΩ @ VGS=10V
- **Continuous leakage current (ID)**: 20A
- **Technology**: SJ_Multi-EPI technology
Domain and module applications：
### 3. Application fields and module examples
**1. Power management**
21N65M5-VB is suitable for high-voltage power electronic applications such as switching power supplies and inverters. Its high withstand voltage characteristics and low on-resistance can achieve efficient energy conversion and is suitable for power management modules in industrial and communication equipment.
**2. Electric vehicle charging piles**
This MOSFET can be used for charging controllers in electric vehicle charging piles. Its high withstand voltage and high current carrying capacity can cope with high-power charging requirements and ensure the safety and stability of the system.
**3. Automotive electronics**
In the field of automotive electronics, 21N65M5-VB can be used in automotive battery management systems (BMS) and on-board power modules. Its high withstand voltage and high current capabilities can meet the high power requirements in automotive electronic systems while ensuring the stability and safety of the system.
**4. Industrial Control**
This device is suitable for industrial control fields, such as switches and drive circuits in PLCs and industrial robots. Its high reliability and durability ensure stable operation in harsh industrial environments and are suitable for various automation control systems.
**5. Solar Inverter**
21N65M5-VB can also be used in solar inverters to control energy conversion between solar panels and the grid. Its high efficiency and low loss help improve the energy conversion efficiency of solar power stations.
The above examples show the wide applicability of 21N65M5-VB in different fields and modules, and illustrate its importance and superiority in various types of high-voltage power electronic equipment.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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