中文
English
21N50C3-VB TO263 Product details
Back to previous pageProduct introduction：
### 21N50C3-VB TO263 MOSFET Product Introduction
#### 1. Product Introduction
VBsemi's 21N50C3-VB TO263 is a single N-channel MOSFET that uses SJ_Multi-EPI technology. The device has a high drain-source voltage and moderate on-resistance, suitable for power management applications that require high voltage and medium current handling capabilities.
#### 1. Product Introduction
VBsemi's 21N50C3-VB TO263 is a single N-channel MOSFET that uses SJ_Multi-EPI technology. The device has a high drain-source voltage and moderate on-resistance, suitable for power management applications that require high voltage and medium current handling capabilities.
File download
Download PDF document
Download now
Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N-Channel | 650V | 3.5V | 20A | 160mΩ | SJ_Multi-EPI |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N-Channel | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N-Channel | 650V | 3.5V | 20A | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N-Channel | 650V | 3.5V | 20A | SJ_Multi-EPI |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N-Channel |
#### 2. Detailed parameter description
- **Package**: TO263
- **Configuration**: Single-N-Channel
- **Drain-source voltage (VDS)**: 650V
- **Gate-source voltage (VGS)**: ±30V
- **Threshold voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**: 160mΩ @ VGS=10V
- **Drain current (ID)**: 20A
- **Technology**: SJ_Multi-EPI
- **Package**: TO263
- **Configuration**: Single-N-Channel
- **Drain-source voltage (VDS)**: 650V
- **Gate-source voltage (VGS)**: ±30V
- **Threshold voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**: 160mΩ @ VGS=10V
- **Drain current (ID)**: 20A
- **Technology**: SJ_Multi-EPI
Domain and module applications：
#### 3. Application fields and module examples
21N50C3-VB TO263 MOSFET is suitable for a variety of fields and modules. Here are some specific application examples:
1. **Power switch**: Due to its high drain-source voltage and moderate on-resistance, 21N50C3-VB TO263 can be used as a power switch to control the on and off of high-voltage circuits, such as UPS systems, industrial power supplies, etc.
2. **Electric vehicle charger**: In electric vehicle chargers, 21N50C3-VB TO263 can be used as a power switch to achieve efficient charging process control while ensuring safety and stability.
3. **Electric welding machine**: In high-voltage and high-power equipment, such as electric welding machines, 21N50C3-VB TO263 can be used to control the power switch to achieve a stable welding process.
4. **Gas discharge lamp**: In gas discharge lamp, 21N50C3-VB TO263 can be used as the switching device of the driver, providing stable current and efficient energy conversion.
5. **Solar inverter**: In solar inverter, 21N50C3-VB TO263 can be used as the main switching device of the inverter to realize the conversion of solar power into AC power.
By combining its technical features and specific applications, 21N50C3-VB TO263 MOSFET provides an efficient and reliable solution to meet the needs of many modern electronic systems.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
