中文
English
21N50C3-VB TO247 Product details
Back to previous pageProduct introduction：
### 21N50C3-VB TO247 Product Introduction
21N50C3-VB TO247 is a high performance single N-channel MOSFET designed for applications requiring high voltage and high current. It uses SJ_Multi-EPI technology, has low on-resistance and high drain current capability, and is suitable for a variety of high performance power management and switching applications.
21N50C3-VB TO247 is a high performance single N-channel MOSFET designed for applications requiring high voltage and high current. It uses SJ_Multi-EPI technology, has low on-resistance and high drain current capability, and is suitable for a variety of high performance power management and switching applications.
File download
Download PDF document
Download now
Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO247 | Single-N-Channel | 500V | 3.8V | 40A | 80mΩ | SJ_Multi-EPI |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N-Channel | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N-Channel | 500V | 3.8V | 40A | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N-Channel | 500V | 3.8V | 40A | SJ_Multi-EPI |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO247 | Single-N-Channel |
### 21N50C3-VB TO247 Detailed parameter description
- **Package type**: TO247
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 500V
- **Gate-source voltage (VGS)**: ±30V
- **Threshold voltage (Vth)**: 3.8V
- **On-resistance (RDS(ON))**: 80mΩ @ VGS=10V
- **Drain current (ID)**: 40A
- **Technology type**: SJ_Multi-EPI
- **Package type**: TO247
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 500V
- **Gate-source voltage (VGS)**: ±30V
- **Threshold voltage (Vth)**: 3.8V
- **On-resistance (RDS(ON))**: 80mΩ @ VGS=10V
- **Drain current (ID)**: 40A
- **Technology type**: SJ_Multi-EPI
Domain and module applications：
### Applications and Module Examples
**Power Transmission**:
21N50C3-VB TO247 can be used for switches and protection devices in high-voltage power transmission systems. Its high rated voltage and current can meet the needs of high-voltage environments.
**Solar Inverter**:
In solar inverters, this product can be used for high-voltage switches and power inverters. Its high reliability and high performance make it an ideal choice for solar inverter manufacturers.
**Electric Vehicle Charging Pile**:
In electric vehicle charging piles, 21N50C3-VB TO247 can be used for high-voltage switches and power management. Its high rated voltage and current ensure high efficiency and reliability of electric vehicle charging piles.
**Industrial Control**:
In the field of industrial control, this product can be used for high-voltage switches and inverters. Its low on-resistance and high drain current capability ensure stability and efficiency under high load conditions.
21N50C3-VB TO247 has demonstrated its superior performance as a high-performance MOSFET through its wide application in a variety of high-voltage and high-performance applications, providing engineers with a reliable solution.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
