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20N65M5-VB Product details
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### 20N65M5-VB TO263 Product Introduction
20N65M5-VB TO263 is a high performance single N-channel MOSFET with high drain voltage and current handling capability. It is manufactured using SJ_Multi-EPI technology, has low on-resistance and high reliability, and is suitable for high voltage, high performance power switching and motor control applications.
20N65M5-VB TO263 is a high performance single N-channel MOSFET with high drain voltage and current handling capability. It is manufactured using SJ_Multi-EPI technology, has low on-resistance and high reliability, and is suitable for high voltage, high performance power switching and motor control applications.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N-Channel | 650V | 3.5V | 20A | 160mΩ | SJ_Multi-EPI |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N-Channel | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N-Channel | 650V | 3.5V | 20A | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N-Channel | 650V | 3.5V | 20A | SJ_Multi-EPI |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N-Channel |
### Detailed parameter description
- **Package type**: TO263
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 650V
- **Gate-source voltage (VGS)**: ±30V
- **Threshold voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**: 160mΩ @ VGS = 10V
- **Drain current (ID)**: 20A
- **Technology type**: SJ_Multi-EPI
- **Package type**: TO263
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 650V
- **Gate-source voltage (VGS)**: ±30V
- **Threshold voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**: 160mΩ @ VGS = 10V
- **Drain current (ID)**: 20A
- **Technology type**: SJ_Multi-EPI
Domain and module applications：
### Application fields and module examples
1. **Power switch**:
20N65M5-VB TO263 performs well in high-voltage power switches, such as industrial power supplies, UPS, electric vehicle charging piles, etc. Its high drain voltage and current handling capabilities can ensure stable operation of the system under high voltage conditions.
2. **Motor control**:
In industrial motors, electric vehicles and motor drives, this MOSFET can be used as a switching element for motor controllers. Its low on-resistance and high drain current can provide efficient motor control and stable working conditions.
3. **Power transmission and distribution**:
20N65M5-VB TO263 is suitable for switch control in power transmission and distribution systems, such as transformers, inverters and switching power supplies. Its high performance and reliability can improve the efficiency and reliability of the system.
4. **Power Electronics**:
This product is also suitable for various power electronic devices, such as inverters, power conditioners and power controllers. Its high performance and reliability can ensure the stable operation of the equipment in high voltage and high current environments.
In summary, 20N65M5-VB TO263 MOSFET performs well in high voltage and high performance applications, has a wide range of applicability, and can improve the performance and reliability of the system.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
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