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20N65M5-VB TO263 Product details
Back to previous pageProduct introduction：
### 1. 20N65M5-VB Product Introduction
20N65M5-VB is a single N-channel MOSFET launched by VBsemi, using SJ_Multi-EPI technology, with high voltage and high current handling capabilities. The device is designed for applications requiring high voltage and high power, with low on-resistance and high reliability, suitable for various power control and switching circuits.
20N65M5-VB is a single N-channel MOSFET launched by VBsemi, using SJ_Multi-EPI technology, with high voltage and high current handling capabilities. The device is designed for applications requiring high voltage and high power, with low on-resistance and high reliability, suitable for various power control and switching circuits.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N-Channel | 650V | 3.5V | 20A | 160mΩ | SJ_Multi-EPI |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N-Channel | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N-Channel | 650V | 3.5V | 20A | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N-Channel | 650V | 3.5V | 20A | SJ_Multi-EPI |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N-Channel |
### 2. Detailed parameter description of 20N65M5-VB
- **Model: ** 20N65M5-VB
- **Package type: ** TO263
- **Configuration: ** Single N-channel
- **Drain-source voltage (VDS): ** 650V
- **Gate-source voltage (VGS): ** ±30V
- **Gate threshold voltage (Vth): ** 3.5V
- **On-resistance (RDS(ON)): ** 160mΩ @ VGS = 10V
- **Drain current (ID): ** 20A
- **Technology: ** SJ_Multi-EPI
- **Model: ** 20N65M5-VB
- **Package type: ** TO263
- **Configuration: ** Single N-channel
- **Drain-source voltage (VDS): ** 650V
- **Gate-source voltage (VGS): ** ±30V
- **Gate threshold voltage (Vth): ** 3.5V
- **On-resistance (RDS(ON)): ** 160mΩ @ VGS = 10V
- **Drain current (ID): ** 20A
- **Technology: ** SJ_Multi-EPI
Domain and module applications：
### III. Application fields and module examples of 20N65M5-VB
20N65M5-VB MOSFET is suitable for the following fields and modules:
1. **Power supply:** Due to its high voltage and high current handling capabilities, 20N65M5-VB is suitable for power supply modules such as switching power supplies and inverters, which can provide stable voltage and current output.
2. **Industrial control systems:** In industrial equipment, 20N65M5-VB can provide reliable performance in switching circuits and power control modules that need to withstand high voltage and current.
3. **Solar inverter:** In solar cell systems, 20N65M5-VB can be used in inverter modules to achieve the conversion and utilization of solar power.
4. **Electric vehicle charging piles:** In electric vehicle charging piles, 20N65M5-VB can withstand high voltage and current to ensure a safe and reliable charging process.
5. **High-voltage lighting system:** In lighting systems that require high brightness and high efficiency, 20N65M5-VB can be used in switching circuits to achieve efficient power conversion.
From the above examples, it can be seen that 20N65M5-VB plays an important role in various applications that require high voltage and high power handling capabilities, providing reliable power control and switching functions for these applications.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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